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C-13-001-TD-SSTHI/K

Description
Laser Diode, 1310nm, HERMETIC SEALED PACKAGE-4
CategoryLED optoelectronic/LED    photoelectric   
File Size326KB,8 Pages
ManufacturerSource Photonics
Download Datasheet Parametric View All

C-13-001-TD-SSTHI/K Overview

Laser Diode, 1310nm, HERMETIC SEALED PACKAGE-4

C-13-001-TD-SSTHI/K Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSource Photonics
package instructionHERMETIC SEALED PACKAGE-4
Reach Compliance Codeunknown
ConfigurationSINGLE
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesLASER DIODE
Nominal output power2.5 mW
peak wavelength1310 nm
shapeROUND
Maximum threshold current15 mA
P/N: C-13-001-XX-SXXXX/XXX-X-XX
1310nm Laser Diode Module
Features
l
Laser diode with Multi-quantum-well structure
l
Un-cooled operation at -40 to +85°
C
l
Built-in InGaAs monitor photodiode
l
Hermetically sealed active component
l
Complies with Telcordia Technologies GR-468-CORE
l
TOSA
l
FC/ST/SC Receptacle package with 2-hole flange
l
Fiber pigtailed with optional FC/ST/SC/MU/LC connector
l
Design for fiber-optics networks
l
RoHS Compliant available
Absolute Maximum Ratings (Tc=25°
C)
Parameter
Fiber Output Power
LD Reverse Voltage
PD Reverse Voltage
PD Forward Current
Operating Temperature
Storage Temperature
L/M/H/2
Symbol
P
f
V
RLD
V
RPD
I
FPD
T
opr
T
stg
Rating
1(L)/1.5(M)/2.5(H)/3(2)
2
10
1
-40 ~ 85
-40 ~ 85
Unit
mW
V
V
mA
(All optical data refer to a coupled 9/125
μ
m SM fiber)
Optical and Electrical Characteristics (Tc=25°
C)
Parameter
Thres hold Current
L
Fiber Output Power
M
H
2
Peak Wavelength
Spectrum
Width
(RMS)
Forward Voltage
Rise Time / Fall Time
Tracking Error
PD Monitor Current
PD Dark Current
PD Capacitance
Note:
1
DS-5560 Rev 0.0 2009-06-02
Receptacle
TOSA
Pigtail
Symbol
Ith
Min.
-
0.2
0.5
1
2
1290
-
Typ.
10
-
-
1.6
2.5
1310
2
-
-
1.2
-
-
-
-
6
Max.
15
0.5
1
-
-
1330
5
3
3
1.5
0.3
1.5
-
0.1
15
Unit
mA
Notes
CW
P
f
mW
CW, Ith+20mA, kink free
λ
Δλ
nm
CW, Pf = Pf(Min)
CW, Pf = Pf(Min)
CW, Pf = Pf(Min)
Ibias =Ith, 10%~90%
APC, -40 ~ 85℃
CW, P
f
= P
f
(Min), V
RPD
= 2V
V
RPD
= 5V
V
RPD
= 5V, f = 1MHz
-
-
-
-
-1.5
100
-
-
nm
V
F
T
r
/ T
f
ΔP
f
/P
f
I
m
I
dark
C
t
V
ns
dB
μ
A
μ
A
pF
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