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K2095ZC400

Description
Silicon Controlled Rectifier, 4154A I(T)RMS, 4000V V(DRM), 4000V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size382KB,11 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

K2095ZC400 Overview

Silicon Controlled Rectifier, 4154A I(T)RMS, 4000V V(DRM), 4000V V(RRM), 1 Element

K2095ZC400 Parametric

Parameter NameAttribute value
MakerIXYS
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current300 mA
JESD-30 codeO-CXDB-X3
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current4154 A
Off-state repetitive peak voltage4000 V
Repeated peak reverse voltage4000 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR
WESTCODE
An
Date:- 7 Feb, 2005
Data Sheet Issue:- 2
IXYS
Company
Medium Voltage Thyristor
Types K2095Z#360 to K2095Z#420
Old Type No.: P880CH26-42
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
3600-4200
3600-4200
3600-4200
3700-4300
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
It
It
2
2
MAXIMUM
LIMITS
2095
1427
854
4154
3558
18.2
20.0
1.66×10
2.00×10
Non-repetitive
600
300
150
5
5
30
-40 to +125
-55 to +150
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
2
2
Maximum average on-state current, T
sink
=55°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Critical rate of rise of on-state current (Note 6)
Repetitive, 50Hz, 60s
Continuous 50Hz
2
2
(di/dt)
cr
A/µs
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
V
W
W
°C
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
Data Sheet. Types K2095Z#360-420 to K2095Z#360-420 Issue 2
Page 1 of 11
February, 2005
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