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EDI8C32512LPA25EC

Description
SRAM Module, 2MX8, 25ns, CMOS, CQMA68,
Categorystorage    storage   
File Size97KB,6 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

EDI8C32512LPA25EC Overview

SRAM Module, 2MX8, 25ns, CMOS, CQMA68,

EDI8C32512LPA25EC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerEDI [Electronic devices inc.]
Reach Compliance Codeunknown
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeS-CQMA-G68
JESD-609 codee0
memory density16777216 bit
Memory IC TypeSRAM MODULE
memory width8
Number of functions1
Number of terminals68
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQFP
Encapsulate equivalent codeQFP68,.99SQ,50
Package shapeSQUARE
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.008 A
Minimum standby current2 V
Maximum slew rate0.6 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
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