ZXTD4591E6
DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS
SUMMARY
NPN: V
CEO
=60V; I
C
= 1A; h
FE
=100-300
PNP: V
CEO
=-60V; I
C
= -1A; h
FE
=100-300
DESCRIPTION
Complementary NPN and PNP medium power transistors packaged in the 6
lead SOT23 package.
FEATURES
•
Low Equivalent On Resistance
- NPN
- PNP
R
CE(sat)
210mΩ at 1A
R
CE(sat)
355mΩ at -1A
SOT23-6
C2
C1
•
•
•
•
•
•
•
Low Saturation Voltage
h
FE
characterised up to 2A
I
C
=1A Continuous Collector Current
SOT23-6 package
B2
B1
E2
E1
APPLICATIONS
MOSFET gate driver
Low Power Motor Drive
Low Power DC-DC Converters
ORDERING INFORMATION
DEVICE
ZXTD4591E6TA
ZXTD4591E6TC
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
C1
B1
C2
E1
B2
E2
Top View
4591
DEVICE MARKING
4591
ISSUE 1 - JULY 2000
1
ZXTD4591E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
LIMIT NPN
80
60
5
2
1
500
1.1
8.8
1.7
13.6
-55 to +150
LIMIT PNP
-80
-60
-5
-2
-1
-500
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
°C
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 1 - JULY 2000
2
ZXTD4591E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
100
100
80
15
150
10
MIN.
-80
-60
-5
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
300
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100 A
I
C
=-10mA*
I
E
=-100 A
V
CB
=-60V
V
EB
=-4V
V
CES
=-60V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-5V*
I
C
=-1mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
MHz
pF
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
ISSUE 1 - JULY 2000
3
ZXTD4591E6
NPN
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
100
100
80
30
150
10
MIN.
80
60
5
100
100
100
0.25
0.5
1.1
1.0
300
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=60V
V
EB
=4V
V
CES
=60V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=5V*
I
C
=1mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
MHz
pF
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
ISSUE 1 - JULY 2000
4
ZXTD4591E6
NPN TYPICAL CHARACTERISTICS
0.6
0.5
0.4
I
C
/I
B
=10
I
C
/I
B
=50
0.6
+25 ° C
I
C
/I
B
=10
0.5
0.4
0.3
0.2
0.1
0
-(V)
CE(sat)
0.2
0.1
0
1mA
10mA
100mA
1A
10A
V
V
CE(sat)
-(V)
0.3
-55 ° C
+25 ° C
+100 ° C
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C-
Collector Current
V
CE(sat)
v I
C
V
CE(sat)
v I
C
300
V
CE
=5V
1.4
1.2
1.0
I
C
/I
B
=10
240
- Typical Gain
+100 ° C
180
+25 ° C
0.8
- (V)
0.6
-55 °C
120
-55 ° C
BE(sat)
FE
0.4
0.2
+25 ° C
+100 ° C
h
60
0
1mA
V
0
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
h
FE
V I
C
V
BE(sat)
v I
C
1.2
1.0
- (V)
0.8
0.6
0.4
0.2
0
V
CE
=5V
10
I -Collector Current (A)
1
BE(on)
0.1
-55 ° C
+25 ° C
+100 ° C
0.01
DC
1s
100ms
10ms
1ms
100µs
V
C
1mA
10mA
100mA
1A
10A
0.001
0.1
1
10
100
I
C
-Collector Current
V
CE
- Collector Emitter Voltage (V)
V
BE(on)
v I
C
Safe Operating Area
ISSUE 1 - JULY 2000
5
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