ZXT14N50DX
SuperSOT4™
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=50V; R
SAT
= 17m ; I
C
= 6A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
MSOP8
FEATURES
•
•
•
•
•
•
•
•
•
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 12A
I
C
=6A Continuous Collector Current
MSOP8 package
C
B
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
E
E
C
C
C
C
E
2
DEVICE
ZXT14N50DXTA
ZXT14N50DXTC
DEVICE MARKING
T14N50DX
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
12mm embossed
12mm embossed
QUANTITY
PER REEL
1000 units
E
B
3
Top View
4000 units
ISSUE 1 - MARCH 2000
1
4
5
6
7
ORDERING INFORMATION
1
8
ZXT14N50DX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current (c)
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
LIMIT
100
50
7.5
15
6
500
1.1
8.8
1.8
14.4
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
°C
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
70
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - MARCH 2000
2
ZXT14N50DX
CHARACTERISTICS
ISSUE 1 - MARCH 2000
3
ZXT14N50DX
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
6
50
90
120
100
MIN.
100
50
7.5
TYP.
190
70
8.5
100
100
100
9
70
120
155
130
0.95
0.90
250
300
200
75
400
450
350
150
185
65
210
740
900
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=80V
V
EB
=6V
V
CES
=80V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=40mA*
I
C
=6A, I
B
=120mA*
I
C
=6A, I
B
=300mA*
I
C
=6A, I
B
=120mA*
I
C
=6A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
C
=12A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=300mA, V
CE
=10V
f=30MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=5A
I
B1
=I
B2
=125mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 1 - MARCH 2000
4
ZXT14N50DX
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2000
5
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