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ZXT13P12DE6TA

Description
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size412KB,6 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZXT13P12DE6TA Overview

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

ZXT13P12DE6TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSOT-23, 6 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1.1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)55 MHz
ZXT13P12DE6
SuperSOT4™
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-12V; R
SAT
= 37m ; I
C
= -4A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 15A
I
C
=4A Continuous Collector Current
SOT23-6 package
SOT23-6
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
ZXT13P12DE6TA
ZXT13P12DE6TC
DEVICE MARKING
P12D
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
C
C
B
Top View
C
C
E
10000 units
ISSUE 1 - DECEMBER 1999
1

ZXT13P12DE6TA Related Products

ZXT13P12DE6TA ZXT13P12DE6TC ZXT13P12DE6
Description 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
Is it Rohs certified? conform to conform to -
Maker Zetex Semiconductors Zetex Semiconductors -
package instruction SOT-23, 6 PIN SOT-23, 6 PIN -
Reach Compliance Code unknown unknown -
ECCN code EAR99 EAR99 -
Maximum collector current (IC) 4 A 4 A -
Collector-emitter maximum voltage 12 V 12 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 20 20 -
JESD-30 code R-PDSO-G6 R-PDSO-G6 -
JESD-609 code e3 e3 -
Humidity sensitivity level 1 1 -
Number of components 1 1 -
Number of terminals 6 6 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 260 -
Polarity/channel type PNP PNP -
Maximum power dissipation(Abs) 1.1 W 1.1 W -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature 40 10 -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 55 MHz 55 MHz -
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