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BUZ80-E3045

Description
Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size185KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BUZ80-E3045 Overview

Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

BUZ80-E3045 Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeTO-220AB
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)2.6 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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