ZXT13N50DE6
SuperSOT4™
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=50V; R
SAT
= 36m ; I
C
= 4A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
•
•
•
•
•
•
•
•
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 10A
I
C
=4A Continuous Collector Current
SOT23-6 package
SOT23-6
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
ZXT13N50DE6TA
ZXT13N50DE6TC
DEVICE MARKING
N50D
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
C
C
B
Top View
C
C
E
10000 units
ISSUE 1 - NOVEMBER 1999
1
ZXT13N50DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
LIMIT
100
50
7.5
10
4
500
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
°C
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 1 - NOVEMBER 1999
2
ZXT13N50DE6
TYPICAL CHARACTERISTICS
1.2
Max Power Dissipation (W)
10
I
C
Collector Current (A)
1.0
0.8
0.6
0.4
0.2
0.0
1
DC
1s
100ms
10ms
100m
1ms
100µs
Single Pulse T
amb
=25°C
10m
100m
1
10
100
0
20
40
60
80
100
120
140
160
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
120
Thermal Resistance (°C/W)
100
80
60
40
20
D=0.1
D=0.5
Single Pulse
D=0.2
D=0.05
0
100µ
1m
10m
100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 1 - NOVEMBER 1999
3
ZXT13N50DE6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
8.0
75
150
175
145
MIN.
100
50
7.5
TYP.
190
70
8.5
100
100
100
12
100
200
230
180
1.0
0.9
250
300
100
10
400
450
220
30
115
31
220
830
900
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=80V
V
EB
=6V
V
CES
=80V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA*
I
C
=4A, I
B
=100mA*
I
C
=4A, I
B
=400mA*
I
C
=4A, I
B
=100mA*
I
C
=4A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=50mA, V
CE
10V
f=50MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=20mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 1 - NOVEMBER 1999
4
ZXT13N50DE6
TYPICAL CHARACTERISTICS
0.25
Tamb=25°C
I
C
/I
B
=50
100m
I
C
/I
B
=100
0.20
100°C
V
CE(SAT)
(V)
V
CE(SAT)
(V)
0.15
25°C
10m
I
C
/I
B
=50
0.10
0.05
0.00
1m
-55°C
I
C
/I
B
=10
1m
1m
10m
100m
1
10
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
V
CE(SAT)
v I
C
1.2
100°C
V
CE
=2V
1.0
I
C
/I
B
=50
Normalised Gain
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°C
25°C
V
BE(SAT)
(V)
0.8
-55°C
25°C
0.6
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.0
V
CE
=2V
V
BE(ON)
(V)
0.8
-55°C
25°C
0.6
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ISSUE 1 - NOVEMBER 1999
5
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