Power Bipolar Transistor, 20A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| Parts packaging code | TO-204AA |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 20 A |
| Collector-emitter maximum voltage | 140 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 25 |
| JEDEC-95 code | TO-3 |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 2 MHz |
| NS15003 | NS15004 | |
|---|---|---|
| Description | Power Bipolar Transistor, 20A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | Power Bipolar Transistor, 20A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN |
| Is it lead-free? | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | Microsemi | Microsemi |
| Parts packaging code | TO-204AA | TO-204AA |
| package instruction | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
| Contacts | 2 | 2 |
| Reach Compliance Code | compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 20 A | 20 A |
| Collector-emitter maximum voltage | 140 V | 140 V |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 25 | 25 |
| JEDEC-95 code | TO-3 | TO-3 |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Maximum operating temperature | 200 °C | 200 °C |
| Package body material | METAL | METAL |
| Package shape | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | PNP |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | TIN LEAD | TIN LEAD |
| Terminal form | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 2 MHz | 2 MHz |
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