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CUS01(TE85L)

Description
Diode Schottky 30V 1A 2-Pin US-FLAT T/R
CategoryDiscrete semiconductor    diode   
File Size167KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

CUS01(TE85L) Overview

Diode Schottky 30V 1A 2-Pin US-FLAT T/R

CUS01(TE85L) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Reach Compliance Codeunknown
CUS01
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS01
Portable Equipment Battery Application
Unit: mm
Forward voltage: V
FM
= 0.37 V (max) @I
F
= 0.7 A
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to small surface-mount package
“US−FLAT
TM
” (Toshiba package name)
Maximum Ratings
(Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
30
1.0
(Note 1)
20 (50 Hz)
−40
to 125
−40
to 150
Unit
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
3-2B1A
Note 1: T
I
= 86°C: Rectangular waveform (α = 180°), V
R
= 15 V
Weight: 0.004 g (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM (1)
I
RRM (2)
C
j
I
FM
= 0.1 A
I
FM
= 0.7 A
I
FM
= 1.0 A
V
RRM
= 5 V
V
RRM
= 30 V
V
R
= 10 V, f = 1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
Junction to lead of cathode side
Test Condition
Min
Typ.
0.25
0.33
0.39
50
0.5
40
Max
0.37
1.5
75
°C/W
150
30
°C/W
µA
mA
pF
V
Unit
Thermal resistance
(junction to ambient)
Thermal resistance (junction to lead)
R
th (j-I)
1
2004-07-01

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