ZXT11N20DF
SuperSOT4™
20V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY
V
CEO
=20V; R
SAT
= 40m ; I
C
= 2.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
•
•
•
•
•
•
•
•
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 5A
I
C
=2.5A Continuous Collector Current
SOT23 package
SOT23
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
E
C
B
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
Top View
ORDERING INFORMATION
DEVICE
ZXT11N20DFTA
ZXT11N20DFTC
DEVICE MARKING
2N0
REEL SIZE
(inches)
7
13
ISSUE 1 - DECEMBER 1999
1
ZXT11N20DF
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
LIMIT
40
20
7.5
5
2.5
500
625
5
806
6.4
-55 to +150
UNIT
V
V
V
A
A
mA
mW
mW/°C
mW
mW/°C
°C
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 1 - DECEMBER 1999
2
ZXT11N20DF
TYPICAL CHARACTERISTICS
0.7
Max Power Dissipation (W)
10
I
C
Collector Current (A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
140
160
1
DC
1s
100ms
10ms
100m
1ms
100µs
Single Pulse T
amb
=25°C
10m
100m
1
10
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
225
Thermal Resistance (°C/W)
200
175
150
125
100
75
50
25
0
100µ
1m
10m
D=0.1
Single Pulse
D=0.2
D=0.05
D=0.5
100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 1 - DECEMBER 1999
3
ZXT11N20DF
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
7
65
40
90
0.9
0.85
200
300
250
150
100
160
20
122
295
MIN.
40
20
7.5
100
100
100
12
100
60
130
1.0
1.0
900
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=32V
V
EB
=6V
V
CES
=32V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, I
B
=100mA*
I
C
=2.5A, I
B
=250mA*
I
C
=2.5A, I
B
=250mA*
I
C
=2.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=50mA, V
CE
=10V
f=50MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=2A
I
B1
=I
B2
=20mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 1 - DECEMBER 1999
4
ZXT11N20DF
TYPICAL CHARACTERISTICS
0.25
I
C
/I
B
=50
T
amb
=25°C
0.20
100m
V
CE(SAT)
(V)
V
CE(SAT)
(V)
0.15
0.10
0.05
0.00
1m
100°C
I
C
/I
B
=100
25°C
10m
I
C
/I
B
=50
-55°C
I
C
/I
B
=10
10m
100m
1
I
C
Collector Current (A)
10
1m
1m
10m
100m
1
10
I
C
Collector Current (A)
V
CE(SAT)
v I
C
V
CE(SAT)
v I
C
1.2
V
CE
=2V
100°C
1.0
I
C
/I
B
=50
Normalised Gain
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°C
25°C
-55°C
V
BE(SAT)
(V)
0.8
25°C
0.6
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.0
V
CE
=2V
V
BE(ON)
(V)
0.8
-55°C
25°C
0.6
100°C
0.4
1m
10m
100m
1
I
C
Collector Current (A)
10
V
BE(ON)
v I
C
ISSUE 1 - DECEMBER 1999
5
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