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HMT112R7TFR8A-G7

Description
240pin DDR3L SDRAM Registered DIMM
Categorystorage    storage   
File Size1MB,69 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance
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HMT112R7TFR8A-G7 Overview

240pin DDR3L SDRAM Registered DIMM

HMT112R7TFR8A-G7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSK Hynix
Parts packaging codeDMA
package instructionDIMM, DIMM240,40
Contacts240
Reach Compliance Codeunknow
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)533 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N240
JESD-609 codee1
length133.35 mm
memory density9663676416 bi
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals240
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize128MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM240,40
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
power supply1.35 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height3.43 mm
self refreshYES
Maximum standby current0.318 A
Maximum slew rate1.889 mA
Maximum supply voltage (Vsup)1.45 V
Minimum supply voltage (Vsup)1.283 V
Nominal supply voltage (Vsup)1.35 V
surface mountNO
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
width30 mm
240pin DDR3L SDRAM Registered DIMM
DDR3L SDRAM Registered DIMM
Based on 1Gb T-die
HMT112R7TFR8A
HMT125R7TFR8A
HMT125R7TFR4A
HMT151R7TFR8A
HMT151R7TFR4A
*Hynix Semiconductor reserves the right to change products or specifications without notice
Rev. 0.1 / Dec. 2009
1

HMT112R7TFR8A-G7 Related Products

HMT112R7TFR8A-G7 HMT112R7TFR8A-H9 HMT125R7TFR8A-G7 HMT125R7TFR8A-H9 HMT125R7TFR4A-H9 HMT151R7TFR4A-G7 HMT151R7TFR4A-H9 HMT151R7TFR8A-H9 HMT151R7TFR8A-G7
Description 240pin DDR3L SDRAM Registered DIMM 240pin DDR3L SDRAM Registered DIMM 240pin DDR3L SDRAM Registered DIMM 240pin DDR3L SDRAM Registered DIMM 240pin DDR3L SDRAM Registered DIMM 240pin DDR3L SDRAM Registered DIMM 240pin DDR3L SDRAM Registered DIMM 240pin DDR3L SDRAM Registered DIMM 240pin DDR3L SDRAM Registered DIMM
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
Maker SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix
Parts packaging code DMA DMA DMA DMA DMA DMA DMA DMA DMA
package instruction DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM240,40
Contacts 240 240 240 240 240 240 240 240 240
Reach Compliance Code unknow unknown unknow unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 533 MHz 667 MHz 533 MHz 667 MHz 667 MHz 533 MHz 667 MHz 667 MHz 533 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240
JESD-609 code e1 e1 e1 e1 e1 e1 e1 e1 e1
length 133.35 mm 133.35 mm 133.35 mm 133.35 mm 133.35 mm 133.35 mm 133.35 mm 133.35 mm 133.35 mm
memory density 9663676416 bi 9663676416 bit 19327352832 bi 19327352832 bi 19327352832 bi 38654705664 bi 38654705664 bi 38654705664 bi 38654705664 bi
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE
memory width 72 72 72 72 72 72 72 72 72
Number of functions 1 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1 1
Number of terminals 240 240 240 240 240 240 240 240 240
word count 134217728 words 134217728 words 268435456 words 268435456 words 268435456 words 536870912 words 536870912 words 536870912 words 536870912 words
character code 128000000 128000000 256000000 256000000 256000000 512000000 512000000 512000000 512000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
organize 128MX72 128MX72 256MX72 256MX72 256MX72 512MX72 512MX72 512MX72 512MX72
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM240,40 DIMM240,40 DIMM240,40 DIMM240,40 DIMM240,40 DIMM240,40 DIMM240,40 DIMM240,40 DIMM240,40
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260 260
power supply 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192 8192 8192 8192 8192
Maximum seat height 3.43 mm 3.43 mm 3.43 mm 3.43 mm 3.43 mm 3.46 mm 3.46 mm 3.46 mm 3.46 mm
self refresh YES YES YES YES YES YES YES YES YES
Maximum standby current 0.318 A 0.318 A 0.408 A 0.408 A 0.408 A 0.588 A 0.588 A 0.588 A 0.588 A
Maximum slew rate 1.889 mA 2.159 mA 2.159 mA 2.474 mA 3.554 mA 3.554 mA 4.184 mA 3.104 mA 2.699 mA
Maximum supply voltage (Vsup) 1.45 V 1.45 V 1.45 V 1.45 V 1.45 V 1.45 V 1.45 V 1.45 V 1.45 V
Minimum supply voltage (Vsup) 1.283 V 1.283 V 1.283 V 1.283 V 1.283 V 1.283 V 1.283 V 1.283 V 1.283 V
Nominal supply voltage (Vsup) 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V
surface mount NO NO NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 20 20 20 20 20 20 20 20 20
width 30 mm 30 mm 30 mm 30 mm 30 mm 30 mm 30 mm 30 mm 30 mm
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