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APT551R3BN-GULLWING

Description
7.5A, 550V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size161KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APT551R3BN-GULLWING Overview

7.5A, 550V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

APT551R3BN-GULLWING Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeTO-247
package instructionFLANGE MOUNT, R-PSFM-G3
Contacts3
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage550 V
Maximum drain current (ID)7.5 A
Maximum drain-source on-resistance1.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)81 pF
JESD-30 codeR-PSFM-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment180 W
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)71 ns
Maximum opening time (tons)44 ns

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Index Files: 637  2800  771  1178  1942  13  57  16  24  40 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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