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BT151-600

Description
Thyristor SCR 650V 110A 3-Pin(3+Tab) TO-220AB Tube
CategoryAnalog mixed-signal IC    Trigger device   
File Size50KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

BT151-600 Overview

Thyristor SCR 650V 110A 3-Pin(3+Tab) TO-220AB Tube

BT151-600 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknown
, O
ne..
20
STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Thyristors
BT151-600
mm
APPLICATIONS
• For use in applications requiring high
bidirectional blocking voltage capability
and high thermal cycling performance.
Typical applications include motor co-
ntrol, industrial and domestic lighting,
heating and static switching.
3 gate
ABSOLUTE MAXIMUM RATINGS(T
a
=25t:)
SYMBOL
DIM MIN
A 15.70
B
9.90
C
4.20
D
0.70
3.40
F
G
4.98
H 2.70
J
0.44
K 13.20
1.10
L
Q
2.70
2.50
R
S
1.29
u
6.45
V
8.66
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
PARAMETER
MIN
600
600
8
12
100
5
0.5
125
UNIT
V
V
A
A
A
W
W
°C
VDRM
VRRM
ll(AV)
ll(RMS)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-stage current
RMS on-state current
Surge non-repetitive on-state current
Peak gate power dissipation
Average gate power dissipation
Operating junction temperature
Storage temperature
ITSM
PGM
PG<AV>
Tj
Tstg
-45-150
°c
ELECTRICAL CHARACTERISTICS (Tc=25'C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
VRM=VRRM,
MIN
MAX
UNIT
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate-trigger current
Gate-trigger voltage
Holding current
Thermal resistance
V
RM
=V
RRM
,Tj=125°C
VDM-VDRM,
V
D
M=V
D
RM,Tj=125°C
!TM= 23A
0.02
0.5
0.02
0.5
1.75
15
1.5
20
1.6
mA
mA
V
mA
V
VTM
IGT
VGT
IH
RthQ-c)
V
D
=6V;R
L
=10Q
V
D
=6V;R
L
=10n
I
T
= 0.1 A; Gate Open
Junction to case
mA
°C/W
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