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RC3B2V

Description
Rectifier Diode, 1 Element, 1A, Silicon
CategoryDiscrete semiconductor    diode   
File Size59KB,2 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

RC3B2V Overview

Rectifier Diode, 1 Element, 1A, Silicon

RC3B2V Parametric

Parameter NameAttribute value
MakerSANKEN
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum reverse recovery time0.07 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Damper Diodes (For Display)
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
V
F
(V)
max
I
F
(A)
I
R
(µA)
I
R
(H)
(µA)
Others
Rth (j- ) Mass
Fig. Remarks
(°C/ W)
(g)
Tj
(°C)
t
rr
Œ
(µs)
I
F
/
I
RP
(mA)
t
rr

(µs)
I
F
/
I
RP
(mA)
V
R
= V
RM
V
R
= V
RM
max Ta =100°C max
FMP-G2FS
FMQ-G2FLS
1500
5.0
2.0
1.8
5.0
50
500
500
(Tj = 150°C)
0.7
1.2
500/500
0.5
0.3
0.4
500/1000
0.2
2.0
6.5
B
4.0
2.1
A
FMQ-G2FS
10.0
50
–40 to +150
2.8
10.0
2.4
FMQ-G5FMS
FMQ-G5GS
FMP-G5HS
RG 2A2
RC 3B2
1700
1800
1300
1600
8.0
0.5
1.0
5
–40 to +150
20
500
2.7
2.0
3.5
3.6
8.0
0.5
100
1.0
500
0.07 500/500 0.035 500/1000
10.0
1.0
100
25
250
1.0
0.1
0.4
100/100 0.05 100/200
12.0
0.6
C
For
Compen-
D sation
FMP-G2FS
Average Forward Current I
F (AV)
(A)
P
F(AV)
(W)
D.C.
I
FSM
(A)
Tj =150ºC
16
1
12
t /T= 1/ 3, Sinewave
3
t /T=1/ 3, Sinewave
Peak Forward Surge Current
t
T
Forward Current I
F
(A)
I
FSM
(A)
20
I
F(AV)
—P
F(AV)
Characteristics
20
10
V
F
—I
F
Characteristics
(Typical)
5
Tc—I
F(AV)
Derating
50
I
FMS
Rating
t /T = 1/6
4
t /T = 1/2
40
20ms
Forward Power Loss
30
0.1
T
a
=125ºC
100ºC
60ºC
25ºC
8
2
t /T = 1/6
20
4
t /T = 1/2
D.C.
0.01
1
10
0
0
1
2
3
4
5
0.001
0
0.5
1.0
1.5
2.0
0
70
90
110
130
150
0
1
5
10
50
Average Forward Current
I
F(AV)
(A)
Forward Voltage V
F
(V)
Case Temperature Tc
(°C)
Overcurrent Cycles
FMQ-G2FLS
Average Forward Current I
F (AV)
(A)
P
F(AV)
(W)
25
20
t
T
t /T=1/2
8
t /T=1/6
6
Sinewave
DC
I
FSM
(A)
Tj =150ºC
t /T=1/ 3
I
FSM
(A)
30
I
F(AV)
—P
F(AV)
Characteristics
10
Tc—I
F(AV)
Derating
50
I
FMS
Rating
40
20ms
Sinewave
15
10
t /T=1/ 3
Peak Forward Surge Current
150
t /T=1/6
Forward Power Loss
30
4
20
5
0
t /T=1/2
DC
2
10
0
2
4
6
8
10
0
0
25
50
75
100
125
0
1
5
10
50
Average Forward Current
I
F(AV)
(A)
Case Temperature Tc
(°C)
Overcurrent Cycles
FMQ-G2FS
P
F(AV)
(W)
I
FSM
(A)
Tj =150ºC
Average Forward Current I
F (AV)
(A)
D.C.
8
t /T=1/6
6 t /T=1/3,
Sinewave
t /T=1/2
Peak Forward Surge Current
30
t
T
t /T=1/6
I
FSM
(A)
40
I
F(AV)
—P
F(AV)
Characteristics
10
Tc—I
F(AV)
Derating
50
I
FMS
Rating
40
20ms
Forward Power Loss
t /T=1/3,
Sinewave
20
30
4
20
10
D.C.
t /T=1/2
0
0
2
4
6
8
10
2
10
0
0
40
80
120
160
0
1
5
10
50
Average Forward Current
I
F(AV)
(A)
Case Temperature Tc
(°C)
Overcurrent Cycles
External Dimensions
(Unit: mm) (Full-mold)
Flammability:
UL94V-0 or Equivalent
Fig.
A
10.0
3.3
4.0
8.4
4.2
2.8
Fig.
B
15.6
±0.2
5.5
±0.2
3.3
3.45
±0.2
Fig.
C
0.98
±0.05
Fig.
D
1.2
±0.05
Cathode Mark
23.0
9.5
5.5
1.6
Cathode Mark
0.8
2.2
16.9
62.5
±0.7
62.5
±0.7
4.0
±0.2
2.6
3.0
3.9
1.75
±1.75
(13.5)
1.35
0.85
5.08
16.2
3.3
0.8
0.65
–0.1
3.35
+0.2
7.2
±0.2
9.1
±0.2
1.05
–0.1
0.45
+0.2
5.2
±0.2
5.45
5.45
74
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