BR3504 datasheet, PDF - EEWORLD Datasheet

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BR3504: DescriptionBridge Rectifier Diode, 35A, 400V V(RRM),; CategoryDiscrete semiconductor diode; File Size67KB，2 Pages; ManufacturerGalaxy Microelectronics; Environmental Compliance

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BR3504 Overview

Bridge Rectifier Diode, 35A, 400V V(RRM),

BR3504 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Microelectronics
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	400 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	35 A
Maximum repetitive peak reverse voltage	400 V
surface mount	NO

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BL

FEATURES

GALAXY ELECTRICAL

BR35005- - -BR3510

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 35.0 A

SILICON BRIDGE RECTIFIERS

Rating to 1000V PRV

Surge overload rating to

400

Amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

Lead solderable per MIL-STD-202 method 208

Mounting: thru hole for # 8 screw

mounting

BR

METAL HEAT SINK

.452

(11.5)

MAX

.480(12.2)

.425(10.8)

PLASTIC

1.181(30.0)

1.102(28.0)

.673(17.1)

.633(16.1)

HOLE FOR

NO.8 SCREW

AC

.732(18.6)

.692(17.6)

-

+

1.181(30.0)

1.102(28.0)

.673(17.1)

.633(16.1)

AC

.582(14.8)

.543(13.8)

.033x 250

(0.8x 6.4)

inch (mm)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

BR

35005

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard

output current

@T

A

=50

BR

3501

100

70

100

BR

3502

200

140

200

BR

3504

400

280

400

35.0

BR

3506

600

420

600

BR

3508

800

560

800

BR

3510

1000

700

1000

UNITS

V

A

V

RRM

V

RMS

V

DC

I

F(AV)

50

35

50

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

@ 17.5 A

Maximum reverse current

at rated DC blocking voltage

@T

A

=25

@T

A

=100

I

FSM

400.0

A

V

F

I

R

T

J

T

STG

1.1

10.0

1.0

- 55 ---- + 125

- 55 ---- + 150

V

μA

mA

Operating junction temperature range

Storage temperature range

www.galaxycn.com

Document Number 0287053

BL

GALAXY ELECTRICAL

1.

BR3504 Related Products

	BR3504	BR3506	BR3508	BR3510	BR3501	BR3502
Description	Bridge Rectifier Diode, 35A, 400V V(RRM),	Bridge Rectifier Diode, 35A, 600V V(RRM),	Bridge Rectifier Diode, 35A, 800V V(RRM),	Bridge Rectifier Diode, 35A, 1000V V(RRM),	Bridge Rectifier Diode, 35A, 100V V(RRM),	Bridge Rectifier Diode, 35A, 200V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	4	4	4	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum output current	35 A	35 A	35 A	35 A	35 A	35 A
Maximum repetitive peak reverse voltage	400 V	600 V	800 V	1000 V	100 V	200 V
surface mount	NO	NO	NO	NO	NO	NO

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