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HN4C05JU-B

Description
TRANSISTOR 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2L1A, USV, 5 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size316KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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HN4C05JU-B Overview

TRANSISTOR 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2L1A, USV, 5 PIN, BIP General Purpose Small Signal

HN4C05JU-B Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G5
Contacts5
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.4 A
Collector-emitter maximum voltage12 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)500
JESD-30 codeR-PDSO-G5
JESD-609 codee0
Number of components2
Number of terminals5
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
HN4C05JU
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN4C05JU
Low Frequency Amplifier Applications
Muting Applications
Switching Applications
Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.)
:@ I
C
= 10mA/ I
B
= 0.5mA)
High Collector Current : I
C
= 400mA(Max.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
Rating
15
12
5
400
50
200
125
Unit
V
V
V
mA
mA
mW
°C
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC
JEITA
Storage temperature range
T
stg
−55
to 125
°C
TOSHIBA
2-2L1A
Weight: 0.0062g (Typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 130mW.
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
"ON" resistance
Turn on time
Switching time
Storage time
Fall down time
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)(1)
V
CE (sat)(2)
V
BE(sat)
f
T
C
ob
R
on
t
on
t
stg
t
f
D uty cycle
Test Condition
V
CB
=15V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 10mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 200mA, I
B
= 10mA
V
CE
= 200mA, I
C
= 10mA
V
CE
= 2V, I
C
= 10mA
V
CB
= 10V, I
E
= 0, f = 1MHz
,I
B
= 1mA,V
in
=1V
rms
,f=1kHz
I.P
.
O .P.
Min
300
80
Typ.
15
110
0.87
130
4.2
0.9
85
170
40
Max
0.1
0.1
1000
30
250
1.2
Unit
μA
μA
mV
V
MHz
pF
Ω
ns
(Note) hFE Classifications A:300 to 600, B:500 to 1000
Start of commercial production
1999-11
1
2014-03-01

HN4C05JU-B Related Products

HN4C05JU-B HN4C05JU-A
Description TRANSISTOR 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2L1A, USV, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2L1A, USV, 5 PIN, BIP General Purpose Small Signal
Maker Toshiba Semiconductor Toshiba Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
Contacts 5 5
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.4 A 0.4 A
Collector-emitter maximum voltage 12 V 12 V
Configuration COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE) 500 300
JESD-30 code R-PDSO-G5 R-PDSO-G5
JESD-609 code e0 e0
Number of components 2 2
Number of terminals 5 5
Maximum operating temperature 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 130 MHz 130 MHz

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