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B360A

Description
3 A, 60 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size55KB,2 Pages
ManufacturerCTC [Compact Technology Corp.]
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B360A Overview

3 A, 60 V, SILICON, RECTIFIER DIODE

Compact Technology
B320A thru B3200A
REVERSE VOLTAGE -
20
to
200
Volts
FORWARD CURRENT -
3.0
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
B
SMA
SMA
DIM.
A
A
B
C
C
D
E
F
F
E
D
G
H
MIN.
3.99
2.54
1.32
0.15
4.93
0.05
1.98
0.76
MAX.
4.50
2.79
1.47
0.31
5.28
0.127
2.29
1.52
MECHANICAL DATA
Case : JEDEC SMA molded plastic
Polarity : Color band denotes cathode
Weight : 0.062 grams
Mounting position : Any
G
H
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage @ 3.0A
Maximum DC Reverse Current @ TA=25°C
at Rated DC Blocking Voltage @ TA=100°C
Typical Junction Capacitance
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RR M
V
RM S
V
D C
I
F
I
FSM
V
F
I
R
C
J
R
JA
T
J
T
STG
B320A B330A B340A B350A B360A
B380A B3100A B3150A
B3200A
UNIT
V
V
V
A
A
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
3.0
80.0
80
56
80
100
70
100
150
105
150
200
140
200
0.50
0.5
10.0
180
0.70
0.85
0.2
5.0
0.87
0.90
V
mA
150
70
-55 to +125
-55 to +150
110
100
80
pF
°C/W
°C
°C
1
of 2
B320A thru B3200A

B360A Related Products

B360A B3100A B3150A B320A B3200A B330A B340A B350A B380A
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