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ZXMN10A07FTA

Description
700 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size997KB,7 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZXMN10A07FTA Overview

700 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXMN10A07FTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)0.56 A
Maximum drain current (ID)0.7 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.806 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZXMN10A07F
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 100V; R
DS(ON)
= 1
DESCRIPTION
I
D
= 0.64A
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
SOT23
APPLICATIONS
DC - DC Converters
Power Management Functions
Relay and Solenoid driving
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A07FTA
ZXMN10A07FTC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
7N1
Top View
ISSUE 1 - MARCH 2002
1

ZXMN10A07FTA Related Products

ZXMN10A07FTA ZXMN10A07FTC ZXMN10A07F
Description 700 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 700 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET DIODES INC. - ZXMN10A07F - N CH MOSFET; 100V; 800mA; SOT-23
Is it Rohs certified? conform to conform to -
Maker Zetex Semiconductors Zetex Semiconductors -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 100 V 100 V -
Maximum drain current (Abs) (ID) 0.56 A 0.56 A -
Maximum drain current (ID) 0.7 A 0.7 A -
Maximum drain-source on-resistance 0.7 Ω 0.7 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
JESD-609 code e3 e3 -
Humidity sensitivity level 1 1 -
Number of components 1 1 -
Number of terminals 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 260 -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 0.806 W 0.806 W -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature 40 40 -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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