ZXMD63C02X
20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
N-CHANNEL: V
(BR)DSS
=20V; R
DS(ON)
=0.13 ; I
D
=2.4A
P-CHANNEL: V
(BR)DSS
=-20V; R
DS(ON)
=0.27 ; I
D
=-1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
•
•
•
•
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
N-CHANNEL
P-CHANNEL
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMD63C02XTA
ZXMD63C02XTC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
12mm embossed
12mm embossed
QUANTITY
PER REEL
1000 units
4000 units
Top View
DEVICE MARKING
•
ZXM63C02
PROVISIONAL ISSUE A - JUNE 1999
1
ZXMD63C02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(b)(d)
(V
GS
=4.5V; T
A
=70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
2.4
1.9
19
-1.5
19
0.87
6.9
1.04
8.3
1.25
10
-55 to +150
N-CHANNEL
20
±
12
-1.7
-1.35
-9.6
-1.4
-9.6
P-CHANNEL
-20
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
143
100
120
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - JUNE 1999
2
ZXMD63C02X
N-CHANNEL CHARACTERISTICS
Max Power Dissipation (Watts)
100
Refer Note (a)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Refer Note (b)
Refer Note (a)
I
D
- Drain Current (A)
10
1
0.1
DC
1s
100ms
10ms
1ms
100us
0.1
1
10
100
V
DS
- Drain-Source Voltage (V)
T - Temperature (°)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
120
Refer Note (b)
160
Refer Note (a)
100
80
60
D=0.5
140
120
100
80
60
40
20
D=0.2
D=0.1
D=0.05
D=0.5
40
20
D=0.2
D=0.1
D=0.05
0
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
0
0.0001 0.001 0.01
Single Pulse
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
PROVISIONAL ISSUE A - JUNE 1999
3
ZXMD63C02X
P-CHANNEL CHARACTERISTICS
Max Power Dissipation (Watts)
100
Refer Note (a)
1.4
1.2
1.0
Refer Note (b)
ID - Drain Current (A)
10
0.8
0.6
0.4
0.2
0
0
20
40
60
80
Refer Note (a)
1
0.1
DC
1s
100ms
10ms
1ms
100µs
0.1
1
10
100
100
120
140
160
V
DS
- Drain-Source Voltage (V)
T - Temperature (°)
Safe Operating Area
Derating Curve
Refer Note (b)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
120
100
80
60
D=0.5
160
140
120
100
80
60
40
20
D=0.2
D=0.1
D=0.05
D=0.5
Refer Note (a)
40
20
D=0.2
D=0.1
D=0.05
0
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
0
0.0001 0.001 0.01
Single Pulse
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
PROVISIONAL ISSUE A - JUNE 1999
4
ZXMD63C02X
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
15.0
5.9
0.95
V
ns
nC
T
j
=25°C, I
S
=1.7A,
V
GS
=0V
T
j
=25°C, I
F
=1.7A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
3.4
8.1
13.5
9.1
6
0.65
2.5
ns
ns
ns
ns
nC
nC
nC
V
DS
=16V,V
GS
=4.5V,
I
D
=1.7A
(Refer to test
circuit)
V
DD
=10V, I
D
=1.7A
R
G
=6.0Ω, R
D
=5.7Ω
(Refer to test
circuit)
C
iss
C
oss
C
rss
350
120
50
pF
pF
pF
V
DS
=15 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
2.6
0.7
0.130
0.150
20
1
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=± 12V, V
DS
=0V
I
D
=250µA, V
DS
= V
GS
V
GS
=4.5V, I
D
=1.7A
V
GS
=2.7V, I
D
=0.85A
V
DS
=10V,I
D
=0.85A
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JUNE 1999
5
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