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GBU803

Description
8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size65KB,2 Pages
ManufacturerCTC [Compact Technology Corp.]
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GBU803 Overview

8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

Compact Technology
GBU801 thru GBU807
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 8.0
Amperes
GLASS PASSIVATED BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic
technique
The plastic material has UL flammability classification
94V-0
In compliance with EU RoHS 2002/95/EC directives
GBU-S
.880(22.3)
.860(21.8)
.160(4.1)
.140(3.5)
.085(2.16)
.065(1.65)
.310(7.9)
.290(7.4)
.140(3.56)
.130(3.30)
.740(18.8)
.720(18.3)
.080(2.03)
.060(1.52)
MECHANICAL DATA
Polarity : As marked on Body
Weight : 0.134 ounces, 3.8 grams
Mounting position : Any
.367(9.3)
.342(8.7)
.050(1.27)
.040(1.02)
.100(2.54)
.085(2.16)
.080(2.03)
.065(1.65)
.040(1.02)
.030(0.76)
.210(5.33)
.190(4.83)
.030(.75)
.017(.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CTC0163 Ver. 2.0
1
of 2
GBU801 thru GBU807

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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