MICROWAVE CORPORATION
v02.0500
HMC281
GaAs MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
Features
Excellent Noise Figure: 2.5 dB
Stable Gain vs. Temperature: 22 dB ± 2 dB
Wideband Performance: 18 - 32 GHz
Small Size: 0.97 mm x 1.67 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC281 LNA is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT & SATCOM
Functional Diagram
General Description
The HMC281 chip is a three stage GaAs MMIC
Low Noise Amplifier (LNA) which covers the
frequency range of 18 to 32 GHz. The chip
can easily be integrated into Multi-Chip Modules
(MCMs) due to its small (1.62 mm
2
) size. The chip
utilizes a GaAs PHEMT process offering 22 dB
gain from a bias supply of +3.5V @ 60mA with a
noise figure of 2.5 dB. All data is with the chip in
a 50 ohm test fixture connected via ribbon bonds
of minimal length. The HMC281 may be used in
conjunction with HMC143, HMC203, HMC258,
HMC264, or HMC265 mixers to realize a micro-
wave or millimeterwave system receiver.
Electrical Specifications,
T
A
= +25° C, Vdd= +3.5V*, ldd = 60 mA
Parameter
Frequency Range
Gain
Gain Flatness (Any 1 GHz BW)
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
S a t u r a t e d O u t p u t Po w e r ( P s a t )
Output Third Order Intercept (IP3)
Supply Current (I d d)(Vdd = +3.5V, Vgg = -0.15V Typ.)
40
5
8
17
17
Min.
Typ.
18 - 24
22
±1
2.5
13
10
45
9
12
22
60
100
42
6
8.5
20
4
15
Max.
Min.
Typ.
24 - 32
20
±1
3.2
6
7
52
10
12
25
60
100
4.7
Max.
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
mA
*Vdd = Vd1, 2, 3 connected to +3.5V, adjust Vgg = Vg1, 2 between -2.0 to +0.4V to achieve ldd =60 mA typical.
1 - 56
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
MICROWAVE CORPORATION
v02.0500
HMC281
GaAs MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
GaAs MMIC SUB-HARMONICALLY
Noise Figure
MIXER 17 - 25
PUMPED
vs. Temperature
Gain vs. Temperature
30
28
26
24
GAIN (dB)
22
20
18
16
14
12
10
10
15
20
25
30
35
40
FREQUENCY (GHz)
+25 C
-55 C
NOISE FIGURE (dB)
6
+85 C
5
4
3
2
+25 C
+85 C
8
7
GHz
1
-55 C
1
0
15
20
25
FREQUENCY (GHz)
30
35
Input Return Loss
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
10
15
20
25
30
35
40
FREQUENCY (GHz)
Output Return Loss
0
OUTPUT RETURN LOSS (dB)
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
10
15
20
25
30
35
40
FREQUENCY (GHz)
INPUT RETURN LOSS (dB)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 57
AMPLIFIERS - CHIP
MICROWAVE CORPORATION
v02.0500
HMC281
GaAs MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
1
AMPLIFIERS - CHIP
GaAs
Isolation
0
-10
MMIC SUB-HARMONICALLY
Output IP3 @ Vdd = +3V
- 25 GHz
PUMPED MIXER 17
35
-55 C
30
ISOLATION (dB)
-20
IP3 (dBm)
-30
-40
-50
15
-60
-70
10
15
20
25
30
35
40
FREQUENCY (GHz)
10
10
15
20
25
30
35
40
FREQUENCY (GHz)
25
20
+25 C
+85 C
P1dB @ Vdd = +3V
16
14
-55 C
12
P1dB (dBm)
10
8
6
4
2
0
10
15
20
25
30
35
40
+85 C
+25 C
FREQUENCY (GHz)
1 - 58
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
MICROWAVE CORPORATION
v02.0500
HMC281
GaAs MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
Absolute Maximum Ratings
Supply Voltage (Vdd)
Supply Current (ldd)
Gate Bias Voltage (Vgg)
DC Gate Current (mA)
Input Power (RFin) (Vdd = +3V)
Channel Temperature (Tc)
Thermal Resistance (
(Channel Backside)
Storage Temperature
Operating Temperature
jc)
+5 Vdc
120 mA
-2 to +0.4V
4 mA
-5 dBm
175 °C
74 °C/W
1
-65 to +150 °C
-55 to +85 °C
Outline Drawing
ALL DIMENSION IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ± 0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
BACKSIDE METALLIZATION: GOLD
BOND PAD METALLIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 59
AMPLIFIERS - CHIP
v02.0500
MICROWAVE CORPORATION
HMC281
GaAs MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
1
AMPLIFIERS - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC
general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recom-
mended for bringing RF to and from the chip (Figure 1). If 0.254 mm (10 mil) thick alumina thin film
substrates must be used, the die should be raised 0.150 mm (6 mils) so that the surface of the die is
coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102 mm (4 mil)
thick die to a 0.150 mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire
length. Typical die-to-substrate spacing is 0.076 mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3
mil x 0.5 mil) is recommended to minimize inductance on the RF ports. 0.025 mm (1 mil) diameter ball or
wedge bonds are acceptable for DC bias connections.
RF bypass capacitors should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted
eutectically or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recom-
mended.
1 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
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