HMC315
/
315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
AMPLIFIERS - SMT
Typical Applications
The HMC315 / HMC315E is ideal for:
• Fiber Optic OC-48 Systems
• Microwave Test Instrumentation
• Broadband Mobile Radio Platforms
Features
Saturated Output Power: +17 dBm
Output IP3: +33 dBm
Gain: 15 dB
Single Supply: +5V to +7V
Ultra Small Package: SOT26
Functional Diagram
General Description
The HMC315 & HMC315E are ultra broadband GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single positive supply.
The surface mount SOT26 amplifier can be used as a
broadband gain stage, or used with external match-
ing for optimized narrow band applications. The Dar-
lington configuration results in reduced sensitivity to
normal process variations and provides a good 50-
ohm input/output port match. The amplifier provides
15 dB of gain and +17 dBm of saturated power while
operating from a single positive +7V supply.
Electrical Specifications,
T
A
= +25° C, As a Function of Vcc
Vcc = +5V
Parameter
Min.
Frequency Range
Gain
Gain Variation over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (OIP3) @ 1.0 GHz
Noise Figure
Supply Current (Icc)
7
3
18
8
10
23
11
Typ.
DC - 7
14
0.015
10
7
21
11
13
26
6.5
30
17
0.025
7
3
18
13
15
30
11
Max.
Min.
Typ.
DC - 7
15
0.015
10
7
21
16
17.5
33
6.5
50
18
0.025
Max.
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
Vcc = +7V
Units
8 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC315
/
315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Gain & Return Loss @ Vcc= +7V
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
Gain & Return Loss @ Vcc= +5V
20
15
10
RESPONSE (dB)
8
AMPLIFIERS - SMT
S11
S21
S22
5
0
-5
-10
-15
-20
-25
0
1
2
3
4
S11
S21
S22
5
6
7
8
FREQUENCY (GHz)
Gain vs. Temperature @ Vcc= +7V
20
18
16
14
GAIN (dB)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25C
+60C
-40C
Gain vs. Temperature @ Vcc= +5V
20
18
16
14
GAIN (dB)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25 C
+60 C
-40 C
Input & Output
Return Loss vs. Vcc Bias
0
Reverse Isolation vs. Vcc Bias
0
-5
ISOLATION (dB)
-10
-15
-20
-25
-30
S12 Vcc=7V
S12 Vcc=5V
-5
RETURN LOSS (dB)
-10
-15
S11 Vcc=7V
S22 Vcc=7V
S11 Vcc=5V
S22 Vcc=5V
-20
-25
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 69
HMC315
/
315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature @ Vcc= +7V
20
18
16
14
P1dB (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25 C
+60 C
-40 C
P1dB vs. Temperature @ Vcc= +5V
20
18
16
14
P1dB (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25 C
+60 C
-40 C
Psat vs. Temperature @ Vcc= +7V
20
18
16
14
Psat (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25 C
+60 C
-40 C
Psat vs. Temperature @ Vcc= +5V
20
18
16
14
Psat (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25C
+60C
-40C
Output IP3 vs.
Temperature @ Vcc= +7V
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
0
1
2
3
Output IP3 vs.
Temperature @ Vcc= +5V
30
28
26
24
IP3 (dBm)
22
20
18
16
+25 C
+60 C
-40 C
IP3 (dBm)
+25 C
+60 C
-40 C
14
12
10
5
6
7
8
0
1
2
3
4
5
6
7
8
4
FREQUENCY (GHz)
FREQUENCY (GHz)
8 - 70
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC315
/
315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Power Compression
@ 1.0 GHz, Vcc= +5V
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
Power Compression
@ 1.0 GHz, Vcc= +7V
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
8
AMPLIFIERS - SMT
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
-6
-4
-2
0
2
4
6
8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Power Compression
@ 3.0 GHz, Vcc= +7V
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
Power Compression
@ 3.0 GHz, Vcc= +5V
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain (dB)
PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
-6
-4
-2
0
2
4
6
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
INPUT POWER (dBm)
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 71
HMC315
/
315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
AMPLIFIERS - SMT
Application Circuit
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFin)(Vcc = +7.0 Vdc)
Junction Temperature
Continuous Pdiss (T = 60 °C)
(derate 4.14 mW/°C above 60 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+7.5 Vdc
+11 dBm
150 °C
0.373 W
242 °C/W
-65 to +150 °C
-40 to +60 °C
Class 1A
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1.
2. External Blocking Capacitors are required on Pins 1 & 3.
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND
Package Information
Part Number
HMC315
HMC315E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H315
XXXX
315E
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
8 - 72
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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