Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PMBT2222AYS
24 June 2015
40 V, 600 mA, double NPN switching transistor
Product data sheet
1. General description
Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted
Device (SMD) plastic package.
Double PNP complement: PMBT2907AYS
2. Features and benefits
•
•
•
•
Double general-purpose switching transistor
High current (max. 600 mA)
Voltage max. 40 V
AEC-Q101 qualified
3. Applications
•
Switching and linear amplification
4. Quick reference data
Table 1.
Symbol
Per transistor
V
CEO
I
C
Per transistor
h
FE
DC current gain
V
CE
= 10 V; I
C
= 150 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
V
CE
= 10 V; I
C
= 500 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
40
-
-
100
-
300
collector-emitter
voltage
collector current
open base
-
-
-
-
40
600
V
mA
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PMBT2222AYS
40 V, 600 mA, double NPN switching transistor
5. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
E
B
C
E
B
C
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
TSSOP6 (SOT363)
1
2
sym020
3
6. Ordering information
Table 3.
Ordering information
Package
Name
PMBT2222AYS
TSSOP6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
7. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
PMBT2222AYS
[1]
BF%
% = placeholder for manufacturing site code
PMBT2222AYS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 June 2015
2 / 15
NXP Semiconductors
PMBT2222AYS
40 V, 600 mA, double NPN switching transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
[2]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
75
40
6
600
800
200
250
300
400
550
150
150
150
Unit
V
V
V
mA
mA
mA
mW
mW
mW
mW
°C
°C
°C
single pulse; t
p
≤ 1 ms
-
-
T
amb
≤ 25 °C
[1]
[2]
-
-
-
-
-
-55
-65
T
amb
≤ 25 °C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 1 cm .
600
P
tot
(mW)
400
(2)
aaa-017354
(1)
2
200
0
-75
-25
2
25
75
125
T
j
(°C)
175
(1) FR4 PCB; mounting pad for collector 1 cm
(2) FR4 PCB; standard footprint
Fig. 1.
PMBT2222AYS
Per device: Power derating curves SOT363 (SC-88)
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 June 2015
3 / 15
NXP Semiconductors
PMBT2222AYS
40 V, 600 mA, double NPN switching transistor
9. Thermal characteristics
Table 6.
Symbol
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to
ambient
[1]
[2]
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.5
0.2
0.1
0.05
10
0.02
0.01
Thermal characteristics
Parameter
Conditions
in free air
[1]
[2]
Min
-
-
Typ
-
-
Max
500
417
Unit
K/W
K/W
Per device
R
th(j-a)
in free air
[1]
[2]
-
-
-
-
313
227
K/W
K/W
Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.
Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 1 cm .
aaa-017355
2
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMBT2222AYS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 June 2015
4 / 15
京公网安备 11010802033920号
EEWORLD
