Transmissive Photosensors (Photo Interrupters)
ON1110
Photo Interrupter
For contactless SW, object detection
Outline
ON1110 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
1.6
Unit : mm
Mark for indicating
LED side
2.0
ø1.2
3.0±0.3
2.0±0.2
13.8±0.3
2.8±0.2
A
0.4±0.1
8.8±0.2
0.5
Features
Highly precise position detection : 0.3 mm
Fast response : t
r
, t
f
= 6
µs
(typ.)
Small output current variation against change in temperature
Small package used for saving mounting space
Device
center
A'
3.0
*10.0±0.4
3
2
4
1
0.5
1.8±0.2
8.0 min.
2
0.8
6.0±0.2
4.0
1.6
,,
,,
0.7
*2.54
SEC. A-A'
3
4
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Symbol Ratings
V
R
I
F
P
D*1
I
C
3
50
75
20
30
5
100
Unit
V
mA
mW
mA
V
V
mW
˚C
˚C
*1
1
Pin connection
(Note) * is dimension at the root of leads
Output (Photo Collector to emitter voltage V
CEO
transistor)
Emitter to collector voltage V
ECO
Collector power dissipation
Temperature
Operating ambient temperature
Storage temperature
P
C*2
T
opr
–25 to +85
T
stg
–30 to +100
Input power derating ratio is
1.0 mW/˚C at Ta
≥
25˚C.
*2
Output power derating ratio is
1.33 mW/˚C at Ta
≥
25˚C.
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
Collector cutoff current
Output
characteristics Collector to emitter capacitance
Symbol
V
F
I
R
C
t
I
CEO
C
C
V
R
= 3V
V
R
= 0V, f = 1MHz
V
CE
= 10V
V
CE
= 10V, f = 1MHz
0.3
6
0.3
5
50
200
Conditions
I
F
= 50mA
min
typ
1.2
max
1.5
10
Unit
V
µA
pF
nA
pF
mA
µs
V
Collector current
I
C*2
V
CE
= 10V, I
F
= 20mA
Transfer
Response time
t
r
, t
f*1
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω
characteristics
Collector to emitter saturation voltage V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
*
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
*2
I
C
classifications
Class
I
C
(mA)
,,
Q
,,
50Ω
R
L
R
0.75 to 2.15
S
> 1.85
0.3 to 0.85
1
Transmissive Photosensors (Photo Interrupters)
ON1110
I
F
, I
C
— Ta
60
60
I
F
— V
F
10
2
Ta = 25˚C
I
C
— I
F
V
CE
= 10V
Ta = 25˚C
I
F
, I
C
(mA)
50
I
F
50
I
F
(mA)
I
C
(mA)
Collector current
10
Forward current, collector current
40
40
Forward current
30
I
C
30
1
20
20
10
–1
10
10
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10
–2
1
10
10
2
10
3
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Forward current I
F
(mA)
V
F
— Ta
1.6
10
2
I
C
— V
CE
160
Ta = 25˚C
I
C
— Ta
V
CE
= 10V
I
F
= 20mA
I
C
(mA)
V
F
(V)
1.2
I
F
= 50mA
10
I
C
(%)
I
F
= 30mA
20mA
10mA
120
10mA
0.8
1
Relative output current
Forward voltage
Collector current
80
0.4
10
–1
40
0
– 40 – 20
0
20
40
60
80
100
10
–2
10
–1
1
10
10
2
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
I
CEO
— Ta
10
10
3
t
r
— I
C
V
CC
= 10V
Ta = 25˚C
100
I
C
— d
V
CE
= 10V
Ta = 25˚C
I
F
= 20mA
1
I
C
(%)
80
Criterion
0
d
60
I
CEO
(µA)
10
2
V
CE
= 24V
10
–1
10V
t
r
(µs)
R
L
= 1kΩ
10
500Ω
100Ω
10
–2
Relative output current
Dark current
Rise time
40
1
10
–3
Sig.IN
V
CC
Sig. V
1
OUT
V
2
V
2
R
L
90%
10%
20
10
–4
– 40 – 20
,
,,
10
–1
10
–2
10
–1
1
V
1
50Ω
t
r
t
d
t
f
10
0
0
1
2
3
4
5
6
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Collector current I
C
(mA)
Distance d (mm)
2
stm32/stm8
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