PN918LEADFREE datasheet, PDF - EEWORLD Datasheet

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PN918LEADFREE: DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-92,; CategoryDiscrete semiconductor The transistor; File Size329KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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PN918LEADFREE Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-92,

PN918LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	3 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	600 MHz

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PN918

NPN SILICON RF TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR PN918 type

is an NPN silicon RF transistor, manufactured by

the epitaxial planar process and designed for high

frequency amplifier and oscillator applications.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

VEBO

IC

PD

TJ, Tstg

Θ

JA

Θ

JC

30

15

3.0

50

625

1.0

-65 to +150

2.0

12.5

UNITS

V

mA

mW

W

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=15V

BVCBO

IC=1.0μA

30

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

fT

Cob

Cib

Po

Gpe

IC=3.0mA

IE=10μA

IC=10mA,

IB=1.0mA

20

600

15

3.0

MAX

10

UNITS

nA

V

0.4

1.0

V

MHz

VCE=1.0V, IC=3.0mA

VCE=10V, IC=4.0mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

VCB=15V, IC=8.0mA, f=500MHz

VCB=12V, IC=6.0mA, f=200MHz

VCB=15V, IC=8.0mA, f=500MHz

VCE=6.0V, IC=1.0mA,

RG=400Ω, f=60kHz

1.7

3.0

2.0

30

15

25

6.0

pF

mW

dB

%

dB



NF

R0 (11-September 2012)

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