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BUZ50B

Description
6A, 1000V, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size62KB,1 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

BUZ50B Overview

6A, 1000V, N-CHANNEL, Si, POWER, MOSFET

BUZ50B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMELAB
package instructionFLANGE MOUNT, R-MSFM-T3
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

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