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BSO4822HUMA1

Description
Power Field-Effect Transistor, 12.7A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size110KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSO4822HUMA1 Overview

Power Field-Effect Transistor, 12.7A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

BSO4822HUMA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)165 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)12.7 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)51 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSO4822
OptiMOS
â
Small-Signal-Transistor
Product Summary
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x
R
DS(on)
product (FOM)
150°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching applications
Type
BSO4822
Package
SO 8
Ordering Code
Q67042-S4095
Marking
4822
V
DS
R
DS(on)
I
D
30
10
12.7
V
mΩ
A
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
12.7
10.2
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
51
165
6
±20
2.5
-55... +150
55/150/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
I
D
=12.7 A ,
V
DD
=25V,
R
GS
=25Ω
Reverse diode dv/dt
I
S
=12.7A,
V
DS
=24V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
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