Single Phase
Rectifier Bridges
Preliminary Data Sheet
V
RSM
V
800
1200
1400
1600
1800
V
RRM
V
800
1200
1400
1600
1800
Type
PSB 112/08
PSB 112/12
PSB 112/14
PSB 112/16
PSB 112/18
PSB 112
I
dAVM
V
RRM
= 84 A
= 800-1800 V
Symbol
I
dAVM
I
FSM
Test Conditions
T
C
= 100°C, module
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
V
R
= 0
t = 8.3 ms (60 Hz), sine
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
84
1200
1300
1000
1100
7200
7200
5000
5000
-40 ... + 150
150
-40 ... + 125
A
A
A
A
A
A
2
s
A
2
s
A s
A
2
s
°C
°C
°C
V
∼
V
∼
Nm
Nm
g
2
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
•
Package with screw terminals
•
Isolation voltage 3000 V∼
•
Planar glasspassivated chips
•
Blocking voltage up to 1800 V
•
Low forward voltage drop
•
UL registered, E 148688
Applications
•
S
upplies for DC power equipment
•
I
nput rectifiers for PWM inverter
•
B
attery DC power supplies
•
F
ield supply for DC motors
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
50/60 HZ, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
(M6)
(M6)
2500
3000
5
5
270
Mounting torque
Terminal connection torque
typ.
Symbol
I
R
V
F
V
TO
r
T
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
V
R
= V
RRM
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= T
VJM
Characteristic Value
≤
≤
≤
0.3
5.0
1.7
0.8
5
0.85
0.2125
1.05
0.263
10.0
9.4
50
mA
mA
V
V
mΩ
K/W
K/W
K/W
K/W
mm
mm
m/s
2
I
F
= 150 A
T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSB 112
IF(OV)
------
IFSM
200
[A]
10
IFSM (A)
TVJ=45°C
TVJ=150°C
780
900
4
1.6
2
As
150
1.4
1.2
100
TVJ=45°C
1
0 VRRM
TVJ=150°C
50
I
F
0
T
vj
= 150°C
0.5
T
vj
= 25°C
2
0.8
1/2 VRRM
0.6
0.4
10
0
10
1 VRRM
10
1
t[ms] 10
2
10
3
3
1
2
4
t [ms]
6
10
1
1.5
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
300
[W]
250
200
150
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
85
90
95
100
80
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode
PSB 112
0.18 0.1
0.26
= RTHCA [K/W]
100
DC
[A]
80
sin.180°
rec.120°
rec.60°
rec.30°
60
0.43
105
110
115
0.76
120
125
130
40
100
50
PVTOT
0
20
IFAVM
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
60
80 0
[A]
1.76
135
140
20
IdAV
0
50
100
T (°C)
C
150
200
°C
Tamb
50
100
[K]
150
145
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
1.5
K/W
Z thJK
Fig.5 Maximum forward current
at case temperature
1
Z thJC
0.5
Zth
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Power technology
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