Single Phase
Rectifier Bridge
Preliminary Data Sheet
V
RSM
(V)
800
1200
1400
1600
1800
V
RRM
(V)
800
1200
1400
1600
1800
Type
PSB
PSB
PSB
PSB
PSB
35/08
35/12
35/14
35/16
35/18
PSB 35
I
dAVM
V
RRM
+
= 35 A
= 800-1800 V
~
~
-
Symbol
I
dAVM
I
FSM
Test Conditions
T
C
= 85 °C,
T
VJ
= 45 °C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 °C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(per module)
Maximum Ratings
35
400
440
360
400
800
810
650
670
A
A
A
A
A
A²s
A²s
A²s
A²s
°C
°C
°C
V
∼
Nm
Nm
g
V
∼
Features
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
•
•
•
•
•
•
•
•
•
•
Package with screw terminals
Isolation voltage 3000 V
∼
Planar glass passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 148688
∫
i
2
dt
Applications
Supplies for DC power equipment
Input rectifier for PWM inverter
Battery DC power supplies
Field supply for DC motors
T
VJ
T
VJM
T
stg
V
ISOL
M
d
-40... + 150
150
-40... + 150
50/60 Hz, RMS t = 1 min
I
ISOL
≤
1 mA
Mounting torque
t=1s
(M4)
2500
3000
1.5
1.5
105
Advantages
•
•
•
Weight
Terminal connection torque (M4)
typ.
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
I
R
V
F
V
TO
r
T
R
thJC
R
thJK
d
s
d
A
a
Test Conditions
V
R
= V
RRM,
T
VJ
= 25°C
V
R
= V
RRM,
T
VJ
= T
VJM
I
F
= 150 A,
T
VJ
= 25 °C
For power-loss calculations only
per diode; DC
per module
per diode; DC
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
Characteristic Value
≤
≤
≤
0.3
5
2.2
0.85
12
2.8
0.7
3.4
0.85
18.6
18.6
50
mA
mA
V
V
m
Ω
K/W
K/W
K/W
K/W
mm
mm
m/s²
Data according to IEC 60747 refer to a single diode unless otherwise stated
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
200
[A]
150
1:TVJ= 150°C
2:TVJ= 25°C
I F(OV)
------
I FSM
10
IFSM (A)
TVJ=45°C
TVJ=150°C
360
3
2
As
1.6
400
TVJ=45°C
1.4
TVJ=150°C
100
1.2
1
0 V RRM
50
IF
0
1.0
1.5 2.0
VF[V]
1
0.8
1/2 V RRM
0.6
1 V RRM
2
2.5
3.0
0.4
0
10
1
10
t[ms]
2
10
3
10
10
2
1
2
4
t [ms]
6
10
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
55
0.29 0.01
0.57
= RTHCA [K/W]
60
65
70
75
80
85
90
95
100
105
50
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
[W]
80
PSB 35
40
[A]
30
DC
sin.180°
rec.120°
rec.60°
rec.30°
60
1.12
20
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
IFAVM
30
[A]
0
2.23
110
115
120
125
130
135
140
145
°C
150
10
I dAV
0
50
100
T (°C)
C
150
200
20
5.57
PVTOT
0
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
5
Fig.5 Maximum forward current
at case temperature
K/W
4
Z thJC
Z thJK
3
2
1
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
MCU
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