Single Phase
Rectifier Bridge
Preliminary Data Sheet
V
RSM
V
DSM
(V)
800
1200
1400
1600
1800
V
RRM
V
DRM
(V)
800
1200
1400
1600
1800
Type
PSB 36
I
dAV
V
RRM
+
= 30 A
= 800-1800 V
PSB
PSB
PSB
PSB
PSB
36/08
36/12
36/14
36/16
36/18
~
~
-
Symbol
I
dAVM
I
FSM
Test Conditions
T
C
= 62 °C,
T
VJ
= 45 °C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 °C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(per module)
Maximum Ratings
30
550
600
500
550
1520
1520
1250
1250
A
A
A
A
A
A²s
A²s
A²s
A²s
°C
°C
°C
V
∼
V
∼
Nm
g
Features
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
∫
i
2
dt
•
•
•
•
•
•
Package with 1/4“ fast-on terminals
Isolation voltage 3000 V
∼
Planar glass passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 148688
Applications
T
VJ
T
VJM
T
stg
V
ISOL
M
d
-40... + 150
150
-40... + 150
50/60 Hz, RMS t = 1 min
I
ISOL
≤
1 mA
t=1s
(M5)
Mounting torque
typ.
2500
3000
2
20
•
•
•
•
Supplies for DC power equipment
Input rectifier for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Weight
•
•
•
Easy to mount with one screw
Space and weight savings
Improved temperature and power
cycling capability
Symbol
I
R
Test Conditions
V
R
= V
RRM,
V
R
= V
RRM,
I
F
= 150 A,
T
VJ
= T
VJM
T
VJ
= 25°C
T
VJ
= 25 °C
Characteristic Value
≤
0.3
2.0
1.7
0.8
5.8
6.2
1.55
7.4
1.85
12.7
9.4
50
mA
mA
V
V
m
Ω
K/W
K/W
K/W
K/W
mm
mm
m/s²
≤
≤
Package style and outline
Dimensions in mm (1mm = 0.0394“)
V
F
V
TO
r
T
R
thJC
R
thJK
d
s
d
A
a
For power-loss calculations only
per diode; DC
per module
per diode; DC
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
Data according to IEC 60747 refer to a single diode unless otherwise stated
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
200
[A]
150
1:TVJ= 150°C
2:TVJ= 25°C
I F (OV)
-- ----
I F SM
IFSM (A)
TVJ=45°C
TVJ=150°C
480
500
4
10
2
As
1.6
1.4
1.2
100
1
0 V RRM
10
3
TVJ=45°C
TVJ=150°C
50
IF
0
0.5
1
1.5
VF[V]
2
2.5
1
0.8
1/2 V RRM
0.6
1 V RRM
2
0.4
100
101 t[ms] 102
103
10
2
1
2
4
t [ms]
6
10
Fig. 1 Forward current versus
voltage drop per diode
70
[W]
60
50
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
55
0.36
0.71
= RTHCA [K/W]
60
65
70
75
80
85
90
95
100
105
50
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
PSB 36
50
[A]
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.43
40
30
20
10
PVTOT
0
IFAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
[A]
0
Tamb
30
2.86
110
115
120
125
20
7.14
130
135
140
145
10
IdAV
0
50
100
TC(°C)
150
200
°C
150
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current
at case temperature
K/W
8
Z thJK
6
Z thJC
4
2
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
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