Single Phase
Rectifier Bridges
Preliminary Data Sheet
V
RSM
V
800
1200
1400
1600
1800
V
RRM
V
800
1200
1400
1600
1800
Type
PSB 61/08
PSB 61/12
PSB 61/14
PSB 61/16
PSB 61/18
PSB 61
I
dAVM
V
RRM
= 65 A
= 800-1800 V
~
~
Symbol
I
dAVM
I
FSM
Test Conditions
T
C
= 100°C, module
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
V
R
= 0
t = 8.3 ms (60 Hz), sine
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
65
1000
1100
900
1000
5000
5050
4050
4170
-40 ... + 150
150
-40 ... + 125
A
A
A
A
A
A
2
s
A
2
s
A s
A
2
s
°C
°C
°C
V
∼
V
∼
Nm
g
2
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
•
Package with fast-on terminals
•
Isolation voltage 3000 V∼
•
Planar glasspassivated chips
•
Blocking voltage up to 1800 V
•
Low forward voltage drop
•
UL
registered E 148688
Applications
•
S
upplies for DC power equipment
•
I
nput rectifiers for PWM inverter
•
B
attery DC power supplies
•
F
ield supply for DC motors
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
50/60 HZ, RMS
I
ISOL
≤
1 mA
Mounting torque
typ.
t = 1 min
t=1s
(M5)
2500
3000
2-2.5
100
Symbol
I
R
V
F
V
TO
r
T
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
V
R
= V
RRM
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= T
VJM
Characteristic Value
≤
≤
≤
0.12
3
1.45
0.8
5
1.12
0.28
1.49
0.37
21
12.4
50
mA
mA
V
V
mΩ
K/W
K/W
K/W
K/W
mm
mm
m/s
2
I
F
= 150 A
T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSB 61
200
[A]
150
1.6
IF(OV)
------
IFSM
10
IFSM (A)
TVJ=45°C
1000
TVJ=150°C
900
4
2
As
1.4
100
1.2
TVJ=45°C
TVJ=150°C
0 VRRM
1
50
IF
0
TVJ= 150°C
TVJ= 25°C
0.8
1/2 VRRM
0.6
1 VRRM
10
0.5
1
VF[V]
1.5
2
0.4
10
0
10
1
t[ms]
10
2
10
3
3
1
2
4
t [ms]
6
10
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
95
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
200
[W]
175
150
125
100
75
50
25
PVTOT
0
PSB 61
80
[A]
60
DC
sin.180°
rec.120°
rec.60°
rec.30°
0.34 0.22
0.47
= RTHCA [K/W]
100
105
110
0.72
115
120
40
1.22
125
130
135
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
IFAVM
40
60 0
[A]
20
IdAV
0
50
100
TC(°C)
150
200
2.72
140
°C
Tamb
50
100
[K]
150
145
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
2
Z thJK
Z thJC
Fig.5 Maximum forward current
at case temperature
K/W
1.5
1
0.5
Zth
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
0.01
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
京公网安备 11010802033920号
EEWORLD
