Single Phase
Rectifier Bridges
Preliminary Data Sheet
V
RSM
V
800
1200
1400
1600
1800
V
RRM
V
800
1200
1400
1600
1800
Type
PSB 82/08
PSB 82/12
PSB 82/14
PSB 82/16
PSB 82/18
PSB 82
I
dAVM
V
RRM
= 72A
= 800-1800 V
~
~
Symbol
I
dAVM
I
FSM
Test Conditions
T
C
= 100°C, module
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
V
R
= 0
t = 8.3 ms (60 Hz), sine
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
72
750
820
670
740
2800
2800
2250
2250
-40 ... + 150
150
-40 ... + 125
A
A
A
A
A
A
2
s
A
2
s
A s
A
2
s
°C
°C
°C
V
∼
V
∼
Nm
Nm
g
2
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
•
Package with screw terminals
•
Isolation voltage 3000 V∼
•
Planar glasspassivated chips
•
Blocking voltage up to 1800 V
•
Low forward voltage drop
•
UL
registered E 148688
Applications
•
S
upplies for DC power equipment
•
I
nput rectifiers for PWM inverter
•
B
attery DC power supplies
•
F
ield supply for DC motors
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
50/60 HZ, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
(M5)
(M5)
2500
3000
5
5
160
Mounting torque
Terminal connection torque
typ.
Symbol
I
R
V
F
V
TO
r
T
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
V
R
= V
RRM
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= T
VJM
Characteristic Value
≤
≤
≤
0.3
5
1.6
0.8
5
1.1
0.28
1.52
0.38
10
9.4
50
mA
mA
V
V
mΩ
K/W
K/W
K/W
K/W
mm
mm
m/s
2
I
F
= 150 A
T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSB 82
IF(OV)
------
IFSM
200
[A]
IFSM (A)
TVJ=45°C
TVJ=150°C
750
670
4
10
2
As
1.6
150
1.4
1.2
1
0 VRRM
TVJ=45°C
100
10
3
TVJ=150°C
50
I
F
0
T
vj
= 150°C
T
vj
= 25°C
2
0.8
1/2 VRRM
0.6
0.4
0
10
10
1
1 VRRM
10
t[ms] 10
2
10
3
2
1
2
4
t [ms]
6
10
0.5
1
1.5
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
95
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
200
[W]
175
150
125
100
75
50
25
PVTOT
0
PSB 82
0.35 0.22
0.47
= RTHCA [K/W]
100
105
110
TC
80
DC
[A]
60
sin.180°
rec.120°
rec.60°
rec.30°
0.73
115
120
1.23
125
130
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
30
IFAVM
50
70 0
[A]
135
20
IdAV
0
50
100
TC(°C)
150
200
2.72
140
145
150
°C
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
Fig.5 Maximum forward current
at case temperature
2
K/W
Z thJK
1.5
Z thJC
1
0.5
Zth
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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