Single Phase
Half Controlled Bridges
Preliminary Data Sheet
V
RSM
V
DSM
500
900
1300
1500
*1700
V
RRM
V
DRM
400
800
1200
1400
*1600
Type
PSBZ 50/04
PSBZ 50/08
PSBZ 50/12
PSBZ 50/14
PSBZ 50/16
PSBZ 50
I
dAV
V
RRM
= 53 A
= 400-1600 V
~
~
* Delivery on request
Symbol
I
dAV
I
TSM
, I
FSM
Test Conditions
T
C
= 85 °C
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
180° sine, per module
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
53
550
600
500
550
1520
1520
1250
1250
150
2
A
A
A
A
A
A s
A
2
s
A
2
s
A
2
s
A/µs
Features
•
Package with fast-on terminals
•
Isolation voltage 3000 V∼
•
Planar glasspassivated chips
•
Low forward voltage drop
•
UL
registered E 148688
Applications
•
Heat and temperature control for
industrial furnaces and chemical
processes
•
Lighting control
•
Motor control
•
Power converter
∫
i dt
2
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(di/dt)
cr
T
VJ
= T
JVM
repetitive, I
T
= 50 A
f = 50Hz, t
P
= 200µs
V
D
= 2/3 V
DRM
I
G
= 0.3 A
non repetitive, I
T
= ½ I
dAV
di
G
/dt = 0.3 A/µs
.
500
1000
≤
≤
10
5
0.5
A/µs
V/µs
W
W
W
V
°C
°C
°C
V
∼
V
∼
Nm
g
(dv/dt)
cr
P
GM
P
GAVM
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
= T
VJM
V
DR
= 2/3 V
DRM
R
GK
=
∞,
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30µs
t
P
= 500µs
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
•
High power density
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
10
-40 ... + 125
125
-40 ... + 125
50/60 HZ, RMS
I
ISOL
≤
1 mA
Mounting torque
typ.
t = 1 min
t=1s
(M5)
2500
3000
2 - 2.5
100
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
PSBZ 50
Symbol
I
D
, I
R
V
T
, V
F
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
Characteristic Value
5
1.64
0.85
11
1.5
1.6
100
200
0.2
5
450
200
2
250
0.9
0.225
1.1
0.275
16.1
7.1
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
µs
K/W
K/W
K/W
K/W
mm
mm
m/s
2
T
VJ
= T
VJM
, V
R
= V
RRM
, V
D
= V
DRM
≤
I
T
, I
F
= 80A, T
VJ
= 25°C
≤
For power-loss calculations only (T
VJ
= T
VJM
)
V
D
= 6V
V
D
= 6V
T
VJ
= T
VJM
T
VJ
= T
VJM
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
≤
≤
≤
≤
≤
≤
≤
≤
≤
T
VJ
= 25°C, t
P
= 10µs
I
G
= 0.45A, di
G
/dt = 0.45A/µs
T
VJ
= 25°C, V
D
= 6V, R
GK
=
∞
T
VJ
= 25°C, V
D
= ½ V
DRM
I
G
= 0.45A, di
G
/dt = 0.45A/µs
T
VJ
= T
VJM
, I
T
= 20A, t
P
= 200µs, V
R
= 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, V
D
= 2/3 V
DRM
per thyristor/Diode; DC
per module
per thyristor/Diode; DC
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
200
T
[A]
150
1:T
VJ
= 25°C
VJ
=25°C
IF(OV)
------
IFSM
us
IFSM (A)
TVJ=45°C
TVJ=150°C
550
490
2:T VJ = 125°C
100
1.6
1.4
1.2
1
10
100
1
tgd
2
0 VRRM
50
IF
0
0.5
1
1.5
2
VF [V]
1
10
100
I [mA]
G
1000
0.8
1/2 VRRM
0.6
0.4
0
10
1 VRRM
1
2
10 t[ms] 10
3
10
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
Fig. 2 Gate trigger delay time
Fig. 3 Surge overload current
per diode (or thyristor) I
FSM
,
I
TSM
: Crest value t: duration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
PSBZ 50
10
V
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10W
6
70
[A]
60
50
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
1
30
5
4
V
G
20
10
ITAV
0
50
100
TC (°C)
150
200
2
1
3
0.1
10
0
10
1
I
G
10
2
10
3
mA
10
4
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
K/W
1.2
1
0.8
0.6
0.4
0.2
Z
thJK
Z thJC
Z th
0.01
0.1
t[s]
1
10
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
200
[W]
175
150
125
100
75
50
25
PVTOT
0
10
ITAVM
30
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
[A]
0
1.02
105
110
PSBZ50
80
0.28 0.15 = RTHCA [K/W]
0.4
TC
85
90
95
0.61
100
2.27
115
120
°C
Tamb
50
100
[K]
150
125
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Embedded System
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