Three Phase
Rectifier Bridge
Preliminary Data Sheet
V
RSM
V
DSM
(V)
800
1200
1400
1600
1800
V
RRM
V
DRM
(V)
800
1200
1400
1600
1800
Type
PSD 82
I
dAV
V
RRM
= 88 A
= 800-1800V
PSD
PSD
PSD
PSD
PSD
82/08
82/12
82/14
82/16
82/18
Symbol
I
dAVM
I
FSM
Test Conditions
T
C
= 110 °C,
T
VJ
= 45 °C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 °C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(per module)
Maximum Ratings
88
750
820
670
740
2800
2800
2250
2250
A
A
A
A
A
A²s
A²s
A²s
A²s
°C
°C
°C
V
∼
V
∼
Features
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
∫
i
2
dt
•
•
•
•
•
•
Package with screw terminals
Isolation voltage 3000 V
∼
Planar glass passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 148688
Applications
T
VJ
T
VJM
T
stg
V
ISOL
M
d
-40... + 150
150
-40... + 125
50/60 Hz, RMS t = 1 min
I
ISOL
≤
1 mA
Mounting torque
t=1s
(M5)
2500
3000
5
5
160
•
•
•
•
Supplies for DC power equipment
Input rectifier for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Nm
Nm
g
Weight
Terminal connection torque (M5)
typ.
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Symbol
I
R
V
F
V
TO
r
T
R
thJC
R
thJK
d
s
d
A
a
Test Conditions
V
R
= V
RRM,
T
VJ
= 25°C
V
R
= V
RRM,
T
VJ
= T
VJM
I
F
= 150 A,
T
VJ
= 25 °C
For power-loss calculations only
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
Characteristic Value
≤
≤
≤
0.3
5
1.6
0.8
5
1.1
0.183
1.52
0.253
10.0
9.4
50
mA
mA
V
V
m
Ω
K/W
K/W
K/W
K/W
mm
mm
m/s²
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Data according to IEC 60747 refer to a single diode unless otherwise stated
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
200
[A]
150
100
50
I
F
0
T
vj
= 150°C
T
vj
= 25°C
2
0.5
1
1.5
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per
diode I
FSM
: Crest value. t: duration
Fig. 3
∫
i
2
dt versus time (1-10ms)
per diode (or thyristor)
Fig. 4 Power dissipation versus direct output
current and ambient temperature
K/W
Fig.5 Maximum forward current at
case temperature
2
Z thJK
Z thJC
1.5
1
0.5
Zth
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
0.01
Microcontroller MCU
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