Three Phase
Full Controlled Bridges
Preliminary Data Sheet
V
RSM
V
DSM
500
900
1300
1500
*1700
V
RRM
V
DRM
400
800
1200
1400
*1600
Type
PSDT 110/04
PSDT 110/08
PSDT 110/12
PSDT 110/14
PSDT 110/16
PSDT 110
I
dAV
V
RRM
= 110A
= 400-1600 V
~
~
~
* Delivery on request
Symbol
I
dAV
I
TSM
Test Conditions
T
C
= 85 °C
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
per module
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
110
1150
1230
1000
1070
6600
6280
5000
4750
150
A
A
A
A
A
A
2
s
A
2
s
A s
A
2
s
A/µs
2
Features
•
Package with screw terminals
•
Isolation voltage 3000 V∼
•
Planar glasspassivated chips
•
Low forward voltage drop
•
UL
registered, E 148688
Applications
•
Heat and temperature control for
industrial furnaces and chemical
processes
•
Lighting control
•
Motor control
•
Power converter
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(di/dt)
cr
T
VJ
= T
JVM
repetitive, I
T
= 50 A
f = 400Hz, t
P
= 200µs
V
D
= 2/3 V
DRM
.
non repetitive, I
T
= 1/3 I
dAV
I
G
= 0.3 A
di
G
/dt = 0.3 A/µs
500
1000
≤
≤
≤
10
5
0.5
A/µs
V/µs
W
W
W
V
°C
°C
°C
V
∼
V
∼
Nm
Nm
g
(dv/dt)
cr
P
GM
P
GAVM
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
= T
VJM
V
DR
= 2/3 V
DRM
R
GK
=
∞,
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30µs
t
P
= 500µs
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
•
High power density
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
10
-40 ... + 125
125
-40 ... + 125
50/60 HZ, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
(M6)
(M6)
2500
3000
5
5
270
Mounting torque
Terminal connection torque
typ.
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSDT 110
Symbol
I
D
, I
R
V
T
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
Characteristic Value
5
1.75
0.85
6
1.5
1.6
100
200
0.2
5
450
200
2
150
0.65
0.108
0.8
0.133
10.0
9.4
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
µs
K/W
K/W
K/W
K/W
mm
mm
m/s
2
T
VJ
= T
VJM
, V
R
= V
RRM
, V
D
= V
DRM
≤
I
T
= 200A, T
VJ
= 25°C
≤
For power-loss calculations only (T
VJ
= T
VJM
)
V
D
= 6V
V
D
= 6V
T
VJ
= T
VJM
T
VJ
= T
VJM
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
≤
≤
≤
≤
≤
≤
≤
≤
≤
T
VJ
= 25°C, t
P
= 30µs
I
G
= 0.3A, di
G
/dt = 0.3A/µs
T
VJ
= 25°C, V
D
= 6V, R
GK
=
∞
T
VJ
= 25°C, V
D
= ½ V
DRM
I
G
= 0.3A, di
G
/dt = 0.3A/µs
T
VJ
= T
VJM
, I
T
= 20A, t
P
= 200µs, V
R
= 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, V
D
= 2/3 V
DRM
per thyristor; sine 180°el
per module
per thyristor; sine 180° el
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
300
[A]
250 2:TVJ = 25°C
200
150
100
50
IF
0
0.5
1:T VJ= 125°C
T
us
VJ
=25°C
I
T(OV)
------
ITSM
ITSM (A)
TVJ=45°C
TVJ=150°C
1000
1.6
1150
100
1.4
tgd
1.2
1
10
0 VRRM
0.8
1/2 VRRM
0.6
1 VRRM
1
1
V F [V]
1.5
2
2
1
10
100
I [mA]
G
1000
0.4
10
0
10
1
t[ms]
10
2
10
3
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
Fig. 2 Gate trigger delay time
Fig. 3 Surge overload current
per diode (or thyristor) I
FSM
,
I
TSM
: Crest value t: duration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSDT 110
10
V
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10W
6
5
4
120
[A]
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
80
1
60
40
V
G
2
1
3
20
ITAV
0
50
100
TC(°C)
150
200
0.1
10
0
10
1
I
G
10
2
10
3
mA
10
4
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
K/W
1
Z thJK
Z thJC
0.8
0.6
0.4
0.2
Z th
0.01
0.1
t[s]
1
10
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
80
400
[W]
PSDT 110
350
300
TC
0.14 0.08
0.2
= RTHCA [K/W]
85
90
95
250
200
150
100
50
PVTOT
0
ITAVM
50
DC
sin.180°
rec.120°
rec.60°
rec.30°
0
100
[A]
0.31
100
105
0.52
110
1.14
115
120
°C
125
Tamb
50
100
[K]
150
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PCB Design
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