EEWORLDEEWORLDEEWORLD

Part Number

Search

IDT71V65812S200BG8

Description
ZBT SRAM, 512KX18, 3.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
Categorystorage    storage   
File Size538KB,26 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric Compare View All

IDT71V65812S200BG8 Overview

ZBT SRAM, 512KX18, 3.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119

IDT71V65812S200BG8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time3.2 ns
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density9437184 bit
Memory IC TypeZBT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals119
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX18
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum seat height2.36 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width14 mm
256K x 36, 512K x 18
3.3V Synchronous ZBT™ SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs
Features
u
256K x 36, 512K x 18 memory configurations
u
Supports high performance system speed - 200 MHz
u
ZBT
TM
Feature - No dead cycles between write and read cycles
u
Internally synchronized output buffer enable eliminates the
u
Single R/W (READ/WRITE) control pin
u
Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
u
4-word burst capability (interleaved or linear)
u
Individual byte write (BW
1
-
BW
4
) control (May tie active)
u
Three chip enables for simple depth expansion
u
3.3V power supply (±5%)
u
2.5V I/O Supply (V
DDQ
)
u
Power down controlled by ZZ input
u
Packaged in a JEDEC standard 100-pin plastic thin quad
need to control
OE
(3.2 ns Clock-to-Data Access)
Preliminary
IDT71V65612
IDT71V65812
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA)
The IDT71V65612/5812 are 3.3V high-speed 9,437,184-bit
(9 Megabit) synchronous SRAMS. They are designed to eliminate dead
bus cycles when turning the bus around between reads and writes, or
writes and reads. Thus, they have been given the name ZBT
TM
, or Zero
Bus Turnaround.
Description
Address and control signals are applied to the SRAM during one clock
cycle, and two cycles later the associated data cycle occurs, be it read
or write. The IDT71V65612/5812 contain data I/O, address and control
signal registers. Output enable is the only asynchronous signal and can
be used to disable the outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V65612/5812
to be suspended as long as necessary. All synchronous inputs are
ignored when (CEN) is high and the internal device registers will hold their
previous values.
There are three chip enable pins (CE
1
, CE
2
,
CE
2
) that allow the
user to deselect the device when desired. If any one of these three are
not asserted when ADV/LD is low, no new memory operation can be
initiated. However, any pending data transfers (reads or writes) will be
completed. The data bus will tri-state two cycles after chip is deselected or
a write is initiated.
The IDT71V65612/5812 has an on-chip burst counter. In the burst
mode, the IDT71V65612/5812 can provide four cycles of data for a single
address presented to the SRAM. The order of the burst sequence is
defined by the
LBO
input pin. The
LBO
pin selects between linear and
interleaved burst sequence. The ADV/LD signal is used to load a new
external address (ADV/LD = LOW) or increment the internal burst counter
(ADV/LD = HIGH).
The IDT71V65612/5812 SRAM utilize IDT's latest high-performance
CMOS process, and are packaged in a JEDEC Standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and 165 fine pitch ball grid array (fBGA).
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
I/O
Supply
Supply
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Static
N/A
N/A
N/A
N/A
Asynchronous
Synchronous
Static
Static
5314 tbl 01
Pin Description Summary
A
0
-A
18
CE
1
, CE
2
,
CE
2
OE
R/W
CEN
BW
1
,
BW
2
,
BW
3
,
BW
4
CLK
ADV/LD
LBO
TMS
TDI
TCK
TDO
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enables
Output Enable
Read/Write Signal
Clock Enable
Individual Byte Write Selects
Clock
Advance burst address / Load new address
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Test Clock
Test Data Output
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc.
NOVEMBER 2000
DSC-5314/01
1
©2000 Integrated Device Technology, Inc.

IDT71V65812S200BG8 Related Products

IDT71V65812S200BG8 IDT71V65612S166BG8 IDT71V65812S166BG8 IDT71V65812S200PF8 IDT71V65612S200BG8 IDT71V65612S166PF8 IDT71V65812S166PF8 IDT71V65612S200PF8
Description ZBT SRAM, 512KX18, 3.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119 ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119 ZBT SRAM, 512KX18, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119 ZBT SRAM, 512KX18, 3.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 ZBT SRAM, 256KX36, 3.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119 ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 ZBT SRAM, 512KX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Parts packaging code BGA BGA BGA QFP BGA QFP QFP QFP
package instruction BGA, BGA, BGA, LQFP, BGA, LQFP, LQFP, LQFP,
Contacts 119 119 119 100 119 100 100 100
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 3.2 ns 3.5 ns 3.5 ns 3.2 ns 3.2 ns 3.5 ns 3.5 ns 3.2 ns
JESD-30 code R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PQFP-G100 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
length 22 mm 22 mm 22 mm 20 mm 22 mm 20 mm 20 mm 20 mm
memory density 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit
Memory IC Type ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
memory width 18 36 18 18 36 36 18 36
Humidity sensitivity level 3 3 3 3 3 3 3 3
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 119 119 119 100 119 100 100 100
word count 524288 words 262144 words 524288 words 524288 words 262144 words 262144 words 524288 words 262144 words
character code 512000 256000 512000 512000 256000 256000 512000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 512KX18 256KX36 512KX18 512KX18 256KX36 256KX36 512KX18 256KX36
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code BGA BGA BGA LQFP BGA LQFP LQFP LQFP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY GRID ARRAY FLATPACK, LOW PROFILE GRID ARRAY FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 225 225 240 225 240 240 240
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 2.36 mm 2.36 mm 2.36 mm 1.6 mm 2.36 mm 1.6 mm 1.6 mm 1.6 mm
Maximum supply voltage (Vsup) 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form BALL BALL BALL GULL WING BALL GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 0.65 mm 1.27 mm 0.65 mm 0.65 mm 0.65 mm
Terminal location BOTTOM BOTTOM BOTTOM QUAD BOTTOM QUAD QUAD QUAD
Maximum time at peak reflow temperature 20 20 20 20 20 20 20 20
width 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
Please help me with the CCS project debugging issue, thank you very much! ! ! !
[b]After clicking debug, the following dialog box appears. I don't know how to solve it. [/b] Error connecting to the target: (Error -600 @ 0x0) A required dynamic library could not be located. The li...
lanmeng_1989 Microcontroller MCU
[ufun Learning] Unboxing Instructions: What are the preparations before formal learning?
Thanks to Teacher Zhang, Mr. Shan, and the website staff for providing us with such a great learning platform. I got the board this afternoon and did a brief study.Let’s talk about what preparations t...
desk1983 stm32/stm8
Wince language support issues
The default language of the system is Traditional Chinese. When browsing the web with a browser, Simplified Chinese will become garbled. For example, when browsing Tudou.com, the text on its homepage ...
redmonster Embedded System
Requesting protection circuit for DSP main circuit
Experts who have information about DSP main circuit protection circuit please post some for me to refer to. Thank you~~~~!!...
yjp0233 DSP and ARM Processors
Please help me with the bootloader of AT90CAN32.
[table=98%] [tr][td][float=right] [/float] Hi everyone, I am working on the bootloader program for the AVR microcontroller recently. The program has been written and can correctly receive the bin file...
李兵李兵 Microchip MCU
Original dsp2812 chips, 8 pieces in total
The extra 2812 chips in the laboratory were bought from Tianjin Zhongshang Dingsheng for 32 yuan at a time, and the extra 8 yuan. Interested parties, QQ: 342496930...
zcruise Buy&Sell

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1065  2703  1506  1582  2777  22  55  31  32  56 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号