BUZ80 datasheet, PDF - EEWORLD Datasheet

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BUZ80: DescriptionPower Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size141KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BUZ80 Overview

Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

BUZ80 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	320 mJ
Configuration	SINGLE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (Abs) (ID)	2.6 A
Maximum drain current (ID)	2.6 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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BUZ 80

SIPMOS

Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

800 V

3.1 A

DS(on

)

Ω

Package

Ordering Code

BUZ 80

TO-220 AB

C67078-S1309-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

= 28 °C

3.1

Pulsed drain current

= 25 °C

Dpuls

12.5

Avalanche current,limited by

jmax

Avalanche energy,periodic limited by

jmax

Avalanche energy, single pulse

= 3.1 A,

= 50 V,

= 25

Ω

= 62.4 mH,

= 25 °C

3.1

320

tot

Gate source voltage

Power dissipation

= 25 °C

100

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

stg

thJC

thJA

-55 ... + 150

°C

≤

1.25

55 / 150 / 56

K/W

Semiconductor Group

09/96

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