Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V
DS
(V)
N-Channel
P-Channel
P Channel
20
−20
20
FEATURES
r
DS(on)
(W)
0.500 @ V
GS
= 4.5 V
0.750 @ V
GS
= 3.0 V
1.00 @ V
GS
=
−4.5
V
1.30 @ V
GS
=
−3.0
V
I
D
(A)
1.2
1.0
−0.85
−0.75
D
100% R
g
Tested
TSOP-6
Top View
G
1
D
1
6
5
S
1
D
G
2
S
2
2
D
G
2
3
4
S
2
G
1
Ordering Information: Si3850DV-T1
Si3850DV-T1—E3 (Lead (Pb)-Free)
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
20
"12
1.2
0.95
3.5
1
1.25
0.8
P-Channel
−20
−0.85
−0.65
−2.5
−1
Unit
V
A
W
_C
−55
to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board,
" v
10 sec)
Symbol
R
thJA
N- or P- Channel
100
Unit
_C/W
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
www.vishay.com
1
Si3850DV
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
−20
V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70_C
V
DS
=
−20
V, V
GS
= 0 V, T
J
= 70_C
On-State
On State Drain Current
a
I
D( )
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
V
DS
=
−5
V, V
GS
=
−4.5
V
V
GS
= 4.5 V, I
D
= 0.5 A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS( )
DS(on)
V
GS
=
−4.5
V, I
D
=
−0.5
A
V
GS
= 3.0 V, I
D
= 0.5 A
V
GS
=
−3.0
V, I
D
=
−0.5
A
Forward Transconductance
a
Diode Forward Voltage
a
g
f
fs
V
SD
V
DS
= 10 V, I
D
= 1.2 A
V
DS
=
−10
V, I
D
=
−0.85
A
I
S
= 1 A, V
GS
= 0 V
I
S
=
−1
A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3.0
−2.0
0.38
0.70
0.55
1.10
2.7
1.2
1.2
−1.2
0.500
1.00
0.750
1.30
S
V
W
N-Ch
P-Ch
0.6
−0.6
1.5
−1.5
"100
1
−1
10
−10
A
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source
Gate Source Charge
Gate-Drain
Gate Drain Charge
Gate Resistance
Turn-On
Turn On Delay Time
Rise Time
Turn-Off
Turn Off Delay Time
Fall Time
Source-Drain
Source Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
d
R
g
t
d( )
d(on)
t
r
t
d( ff)
d(off)
t
f
t
rr
I
F
= 1 A, di/dt = 100 A/ms
I
F
=
−1
A, di/dt = 100 A/ms
N-Channel
N Channel
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 4.5 V, R
g
= 6
W
P Channel
P-Channel
V
DD
=
−10
V, R
L
= 10
W
10 V
I
D
^
−1
A, V
GEN
=
−4.5
V, R
g
= 6
W
N-Ch
N-Channel
V
DS
= 10 V V
GS
= 4 5 V I
D
= 1 2 A
V,
4.5 V,
1.2
P-Channel
V
DS
=
−10
V V
GS
=
−4
5 V
V,
−4.5
I
D
=
−0.85
A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.3
3
10
8
20
20
20
10
16
8
40
40
0.8
1.10
0.25
0.50
0.2
0.2
1.5
16
20
15
40
40
40
20
30
15
80
80
ns
W
2.0
2.5
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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