SCA-CA256ES
Silicon PIN Photodiode Array
P r e lim inar y Da ta She e t
Description
The SCA-CA256ES is a back-illuminated silicon photodiode
array for use in applications where peak sensitivity from
480nm to 800nm is required.
Array Configuration
The ultra low cross talk between cells enhances photon
detection. Back illumination allows for easy scintillator
attachment.
The SCA-CA256ES is offered in chip configuration or on a
hybrid board that holds associated components for a complete
imaging module. The array configuration encourages tiling to
create large dimension arrays.
Features
•
Flip Chip Configuration
•
Back Illuminated
•
Low Cross Talk
The hybrid is capable of meeting MIL-STD-883 requirements
for electrical testing, environmental integrity and reliability.
Benefits
•
High Reliability
•
2D Tile-able Layout
Please contact the Strategic Marketing Manager for special configurations
www.SEMICOA.com or (714) 242-3007
•
Good Temperature Stability
Absolute Maximum Ratings
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature
(t
≤
5 seconds)
Symbol
T
OP
T
STG
T
SOL
Rating
-45 to +80
-55 to +150
260
Unit
°C
°C
°C
Copyright© 2006
Rev. 5.1
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 3
www.SEMICOA.com
SCA-CA256ES
Silicon PIN Photodiode Array
P r e lim inar y Da ta She e t
DEVICE CHARACTERISTICS
Mechanical Characteristics
Active Area Size
Pixel Pitch
d
A
0.85 x 0.85
1.0
mm
mm
Optical Characteristics
Spectral Response
Peak Sensitivity Wavelength
λ
λ
p
400 to 1100
850
nm
nm
characteristics specified at T
A
= 25°C
Electrical Characteristics
Parameter
Dark Current
Sensitivity
Internal Quantum Efficiency
Sensitivity Uniformity
Channel-to-Channel
CrossTalk*
Channel-to-Channel
CrossTalk*
Channel-to-Channel
Reverse Breakdown Voltage
Forward Voltage Uniformity
Shunt Resistance
Noise Equivalent Power
Response Time
Response Time
BV
R
V
F
R
S
NEP
t
R
t
R
Symbol
I
D
S
QE
int
Test Conditions
V
R
= 10 mV
λ
= 500 nm
λ
= 600 nm
450 nm
≤ λ ≤
750 nm
at wavelength
400~850nm
Adjacent Channels
Non-adjacent Channels
850~1100nm
Adjacent Channels
Non-adjacent Channels
I
R
= 10
µA
I
F
= 1 mA
V
R
=
±
10 mV
λ
= 480 nm
V
R
= 0 V, Load
≤
100 kΩ
500
0.02
0.002
0.2
0.02
20
±1.0
4,000
1 x 10
-14
1
5
10
18
1.07
2 x 10
-14
5
20
20
30
±0.05
Min
0.3
0.4
95
Typ
1
Max
30
Units
pA
A/W
100
±2.0
0.1
0.01
1.0
0.5
%
%
%
%
V
±5.0
%
MΩ
W/√Hz
µs
ns
pF
times/
°C
%/
°C
V
R
= 5 V, Load
≤
1 kΩ
V
R
= 5 V, f = 1KHz~1 MHz
Capacitance
C
j
V
R
= 0 V, f = 1KHz~1 MHz
Tempco of Dark Current
V
R
= 10 mV
Tempco of Sensitivity
430~850nm, T= 20
°C
to 45
°C
*Cross talk measured with 0.001” diameter spot centered on active area.
Specifications are subject to change without notice. Please consult the website or factory for current information.
Copyright© 2006
Rev. 5.1
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 3
www.SEMICOA.com
SCA-CA256ES
Silicon PIN Photodiode Array
P r e lim inar y Da ta She e t
ARRAY DIMENSIONS
1.0 mm
(0.040")
0.85 mm
(0.034")
1.0 mm 0.85 mm
(0.040") (0.034")
0.15 mm
(0.006")
0.15 mm
(0.006")
16 mm
(0.630")
16 mm
(0.630")
Copyright© 2006
Rev. 5.1
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 3 of 3
www.SEMICOA.com
stm32/stm8
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