HB52F649EN-75B datasheet, PDF - EEWORLD Datasheet

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HB52F649EN-75B: DescriptionSynchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168; Categorystorage storage; File Size123KB，29 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB52F649EN-75B Overview

Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168

HB52F649EN-75B Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	4831838208 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	64MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.036 A
Maximum slew rate	2.25 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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HB52F648EN-75B,

HB52F649EN-75B

512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus

(HB52F648EN) 64-Mword

64-bit, 2-Bank Module

(16 pcs of 32 M

8 Components)

(HB52F649EN) 64-Mword

72-bit, 2-Bank Module

(18 pcs of 32 M

8 Components)

PC133 SDRAM

ADE-203-1115A (Z)

Preliminary

Rev. 0.1

Nov. 26, 1999

Description

The HB52F648EN, HB52F649EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

have been developed as an optimized main memory solution for 8-byte processor applications. They are

synchronous Dynamic RAM Module, mounted 256-Mbit SDRAMs (HM5225805BTT) sealed in TSOP

package, and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). The HB52F648EN is organized

32M

2-bank mounted 16 pieces of 256-Mbit SDRAM. The HB52F649EN is organized 32M

2-bank mounted 18 pieces of 256-Mbit SDRAM. An outline of the products is 168-pin socket type

package (dual lead out). Therefore, they make high density mounting possible without surface mount

technology. They provide common data inputs and outputs. Decoupling capacitors are mounted beside

each TSOP on the module board.

Features

•

Fully compatible with : JEDEC standard outline 8-byte DIMM

•

168-pin socket type package (dual lead out)



Outline: 133.37 mm (Length)

34.925 mm (Height)

4.00 mm (Thickness)



Lead pitch: 1.27 mm

•

3.3 V power supply

•

Clock frequency: 133 MHz (max)

•

LVTTL interface

Preliminary: The specification of this device are subject to change without notice. Please contact your

nearest Hitachi’s Sales Dept. regarding specification.

HB52F649EN-75B Related Products

	HB52F649EN-75B	HB52F648EN-75B
Description	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）
Parts packaging code	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5.4 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz
I/O type	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168
memory density	4831838208 bit	4294967296 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	72	64
Number of functions	1	1
Number of ports	1	1
Number of terminals	168	168
word count	67108864 words	67108864 words
character code	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	65 °C	65 °C
organize	64MX72	64MX64
Output characteristics	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
refresh cycle	8192	8192
self refresh	YES	YES
Maximum standby current	0.036 A	0.036 A
Maximum slew rate	2.25 mA	2.25 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL

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