Mixer Diode, Medium Barrier, KU Band, 400ohm Z(V) Max, 6.5dB Noise Figure, Silicon
| Parameter Name | Attribute value |
| Maker | Hewlett Packard Co. |
| package instruction | O-CEMW-N2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | MIXER DIODE |
| frequency band | KU BAND |
| maximum impedance | 400 Ω |
| minimum impedance | 200 Ω |
| JESD-30 code | O-CEMW-N2 |
| maximum noise index | 6.5 dB |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating frequency | 18 GHz |
| Minimum operating frequency | 12 GHz |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -60 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | MICROWAVE |
| Pulse input maximum power | 0.2 W |
| Minimum pulse input power | 1 W |
| Certification status | Not Qualified |
| surface mount | YES |
| technology | SCHOTTKY |
| Terminal form | NO LEAD |
| Terminal location | END |
| Schottky barrier type | MEDIUM BARRIER |