ECO-PAC
TM
2
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
PSDI 33/06
I
C25
V
CES
I
FAV25
V
RRM
X
KEG
= 44 A
= 600 V
= 18 A
= 1200 V
V P
S MA
Preliminary Data Sheet
IGBT
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
Test Conditions
T
VJ
= 25 °C to 150 °C
continuous
T
C
= 25 °C
T
S
= 80 °C
V
CE
= 600 V, R
G
= 10
Ω,
T
VJ
= 125 °C
clamped inductive load, L = 100 µH
V
CE
= 600 V,
V
GE
=
±15
V, R
G
= 10
Ω,
T
VJ
= 125 °C
,
non-repetitive
Maximum Ratings
600
±20
44
30
I
CM
= 100
V
CEK
≤V
CES
10
µs
V
V
A
A
A
1
3
NTC optional
Symbol
V
CE(sat)
V
CE(sat)
V
CE(sat)
V
GE(th)
V
GE(th)
I
CES
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
Test Conditions
Characteristic Values
T
VJ
= 25 °C, unless otherwise specified
V
GE
= 15 V, I
C
= 10 A, T
VJ
= 25 °C
V
GE
= 15 V, I
C
= 10 A, T
VJ
= 25 °C
max.
typ.
min.
max.
1.8
1.5
1.6
3
5
0.04
1
100
31
50
291
70
0.60
0.31
1600
140
0.96
tbd
V
V
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
K/W
K/W
Features
T
VJ
= 125 °C
typ.
V
GE
= V
CE
, I
C
= 1 mA
V
GE
= V
CE
, I
C
= 1 mA
•
•
•
•
•
•
V
CE
= V
CES
, V
GE
= 0 V
,
T
VJ
= 25 °C
max.
T
VJ
= 125 °C
typ.
}
V
CE
= 0 V, V
GE
=
±20
V
max.
typ.
typ.
typ.
typ.
typ.
typ.
typ.
max.
max.
High level of integration - only one
power semiconductor module required
for the whole braking system module
Isolation voltage 3600 V
∼
Planar glass passivated chips
Ultrafast freewheel diode
Leads suitable for PC board
soldering
Thermistor (optional)
inductive load, T
VJ
= 125 °C
V
CE
= 400 V, I
C
= 10 A
V
GE
=
±15
V, R
G
= 10
Ω
Applications
•
Drive inverters with brake system
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
Advantages
V
CE
= 480 V, IC = 10 A, V
GE
= 15 V
typ.
•
•
•
•
•
Module
Symbol
T
VJ
T
JM
T
stg
V
isol
M
d
Weight
Test Conditions
Maximum Ratings
-40...+150
150
-40...+150
°C
°C
°C
V
∼
V
∼
g
Nm
Easy to mount with two screws
Space and weight savings
high temperature and power
cycling capability
Small and light weight
2 functions in one package
50/60 Hz
Iisol
≤
1 mA
typ.
t = 1 min
t=1s
3000
3600
1.5-2.0
24
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
Data according to IEC 60747 refer to a single diode
unless otherwise stated
Mounting torque (M 4)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PAC
TM
2
Fast Recovery Diode
Symbol
V
RRM
I
F25
I
F80
Test Conditions
T
VJ
= 25 °C to 150 °C
T
C
= 25 °C
T
C
= 80 °C
Maximum Ratings
600
30
19
V
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
V
F
Test Conditions
I
F
= 10 A,
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
Characteristic Values
T
VJ
= 25 °C, unless otherwise specified
max.
typ.
max.
max.
typ.
3.2
2.2
2.4
0.1
0.1
tbd
tbd
1.15
tbd
V
V
V
mA
mA
A
ns
K/W
K/W
I
R
I
RM
t
rr
R
thJC
R
thJH
V
R
= V
RRM
,
T
VJ
= 25 °C
T
VJ
= 125 °C
I
F
= 10 A, di
F
/dt = -400 A/µs, T
VJ
= 125 °C
V
R
= 400 V
max.
with heat transfer paste
Rectifier Diodes
Symbol
V
RRM
I
FAV25
I
FAV80
I
FSM
Test Conditions
T
C
= 25 °C, sine 180 °
T
C
= 80 °C, sine 180 °
T
VJ
= 25 °C,
T = 10 ms (50Hz)
Maximum Ratings
1200
41
28
75
V
A
A
A
Symbol
V
F
Test Conditions
I
F
= 10 A,
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
Characteristic Values
T
VJ
= 25 °C, unless otherwise specified
max.
typ.
typ.
max.
typ.
max.
1.8
1.4
1.6
0.05
0.5
1
2.5
tbd
V
V
V
mA
mA
µs
K/W
K/W
I
R
t
rr
R
thJC
R
thJH
V
R
= V
RRM
,
T
VJ
= 25 °C
T
VJ
= 125 °C
V
R
= 100 V, I
F
= 10 A, -di/dt = 5 A/µs
typ.
per diode
with heat transfer paste
Module
Symbol
d
s
d
A
a
R
25
*
Test Conditions
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
NTC @ 25 °C
Characteristic Values
11.2
5
50
470.000
mm
mm
m/s²
Ω
*NTC will be changed in future
to 5.000
Ω.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
MCU
京公网安备 11010802033920号
EEWORLD
