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N1663DZ32HOO

Description
Silicon Controlled Rectifier, 6260A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element, 101A325, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size77KB,8 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

N1663DZ32HOO Overview

Silicon Controlled Rectifier, 6260A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element, 101A325, 3 PIN

N1663DZ32HOO Parametric

Parameter NameAttribute value
MakerIXYS
package instructionDISK BUTTON, O-CXDB-X3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current300 mA
JESD-30 codeO-CXDB-X3
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current6260 A
Off-state repetitive peak voltage3200 V
Repeated peak reverse voltage3200 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR
WESTCODE
Absolute maximum ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage, (note 1).
Non-repetitive peak reverse voltage, (note 1).
Date : Dec-99
Rat Rep : 99T10
Issue 2
Converter Thyristor
Type N1663xx29xxx to N1663xx35xxx
MAXIMUM
LIMITS
2900-3500
2900-3500
2900-3500
3000-3600
UNITS
V
V
V
V
RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
It
I
2
t
I
2
t
di/dt
I
FGM
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
2
MAXIMUM
LIMITS
3180
2190
1330
6260
5460
49.5×10
55.0×10
15.1×10
9.8×10
150
300
10
5
5
30
0.25
-40 to +125
-40 to +150
3
3
6
6
UNITS
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A/µs
A/µs
A
V
W
W
V
°C
°C
Mean on-state current, Tsink=55°C, (note 2).
Mean on-state current. Tsink=85°C, (note 5).
Mean on-state current. Tsink=85°C, (note 3).
Nominal RMS on-state current, 25°C, (note 2).
D.C. on-state current, 25°C, (note 7).
Peak non-repetitive surge tp=10ms, V
RM
=0.6V
RRM
, (note 4).
Peak non-repetitive surge tp=10ms, V
RM
≤10V,
(note 4).
I t capacity for fusing tp=10ms, V
RM
=0.6V
RRM
, (note 4).
I
2
t capacity for fusing tp=10ms, V
RM
≤10V,
(note 4).
I
2
t capacity for fusing tp=3ms, V
RM
≤0.6V
RRM
, (note 4).
Critical rate of rise of on-state current (continuous), (note 6).
Critical rate of rise of on-state current (intermittent), (note 6).
Peak forward gate current.
Peak reverse gate voltage.
Mean forward gate power.
Peak forward gate power.
Non-trigger gate voltage, (Note 5).
Operating temperature range.
Storage temperature range.
2
12.3×10
6
Notes:-
1) De-rating factor of 0.13% per K is applicable for T
j
below 25°C.
2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.
3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, 125°C T
j
initial.
5) Rated V
DRM.
6) V
D
=67%V
DRM
, I
T
=6000A, I
FG
=2A, t
r
=500ns.
7) Doubleside cooled.
Types N1663xx29xxx to N1663xx35xxx Rat. Rep. 99T10
page 1 of 8
December, 1999
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