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ERC01-06

Description
Rectifier Diode, 1 Element, 1.5A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size52KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric Compare View All

ERC01-06 Overview

Rectifier Diode, 1 Element, 1.5A, 600V V(RRM),

ERC01-06 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current130 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1.5 A
Maximum repetitive peak reverse voltage600 V
surface mountNO
BL
FEATURES
Low cost
GALAXY ELECTRICAL
ERC01-02---ERC01-10
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.5 A
PLASTIC SILICON RECTIFIER
DO - 15
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERC01
-02
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
ERC01
-04
400
280
400
1.5
ERC01
-06
600
420
600
ERC01
-10
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
130.0
A
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.0
5.0
50.0
20
40
- 55---- + 150
- 55 ---- + 150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0260022
BL
GALAXY ELECTRICAL
1.

ERC01-06 Related Products

ERC01-06 ERC01-04
Description Rectifier Diode, 1 Element, 1.5A, 600V V(RRM), Rectifier Diode, 1 Element, 1.5A, 400V V(RRM),
Is it Rohs certified? conform to conform to
Maker Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
Maximum non-repetitive peak forward current 130 A 130 A
Number of components 1 1
Maximum operating temperature 150 °C 150 °C
Maximum output current 1.5 A 1.5 A
Maximum repetitive peak reverse voltage 600 V 400 V
surface mount NO NO
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