Diode Modules
Preliminary Data Sheet
PSKD 255
I
FRMS
I
FAVM
V
RRM
2
= 2x 450 A
= 2x 270 A
= 800-1800 V
3
2
V
RSM
V
900
1300
1500
1700
1900
V
RRM
V
800
1200
1400
1600
1800
Type
3
1
PSKD 255/08
PSKD 255/12
PSKD 255/14
PSKD 255/16
PSKD 255/18
1
Symbol
I
FRMS
I
FAVM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 100°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
Maximum Ratings
450
270
9500
10200
8400
9000
451 000
437 000
353 000
340 000
-40...+150
150
-40...+125
A
A
A
A
A
A
A
2
s
A
2
s
As
A
2
s
2
Features
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
●
●
●
●
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
●
●
●
●
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
RRM
V
F
V
T0
r
T
R
thJC
R
thJK
Q
S
I
RM
d
S
d
A
a
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
°C
°C
°C
V~
V~
3000
3600
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
●
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 600 A; T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
per
per
per
per
diode; DC current
module
diode; DC current
module
other values
see PSKT 255
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
g
Characteristic Values
30
mA
1.4
0.8
0.6
0.140
0.07
0.18
0.09
700
260
12.7
9.6
50
V
V
m
Ω
K/W
K/W
K/W
K/W
µC
A
mm
mm
m/s
2
Dimensions in mm (1 mm = 0.0394")
M8x20
T
VJ
= 125°C; I
F
= 400 A; -di/dt = 50 A/µs
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
10000
10
6
It
2
I
FSM
A
V
R
= 0V
A
2
s
500
A
450
8000
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
I
FAVM
400
350
300
DC
180° sin
120°
60°
30°
6000
T
VJ
= 45°C
4000
250
T
VJ
= 150°C
200
150
100
50
2000
0
0.001
0.01
0.1
s
t
1
10
5
1
t
ms
10
0
0
25
50
75
100
T
C
125 °C 150
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
500
P
tot
W
400
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus
forward current and ambient
temperature (per diode)
R
thKA
K/W
300
DC
180° sin
120°
60°
30°
0.1
0.2
0.3
0.4
0.6
0.8
1.2
200
100
0
0
100
200
300
400 A
I
FAVM
0
25
50
75
100
125
°C
T
A
150
1500
P
tot
W
1250
R
1000
L
R
thKA
K/W
750
Circuit
Circuit
B2U
B2U
2 x
x MDD255
2
PSKD 255
0.06
0.08
0.1
0.15
0.2
0.3
0.5
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
500
250
0
0
100
200
300
400
500 A
I
dAVM
0
25
50
75
100
°C
125
T
A
150
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2500
W
P
tot
2000
R
thKA
K/W
1500
0.03
0.06
0.1
0.15
0.2
0.3
0.4
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
1000
Circuit
Circuit
B6U
B6U
3
PSKD 255
3 x
x MDD255
500
0
0
200
400
600
800 A
I
dAVM
0
25
50
75
100
125 °C 150
T
A
0.25
K/W
0.20
Z
thJC
0.15
30°
60°
120°
180°
DC
Fig. 7 Transient thermal impedance
junction to case (per diode)
R
thJC
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJC
(K/W)
0.139
0.148
0.156
0.176
0.214
0.10
0.05
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
0.0066
0.0358
0.0831
0.0129
t
i
(s)
0.00054
0.098
0.54
12
1
2
3
4
0.00
10
-3
10
-2
10
-1
10
0
10
1
t
s
10
2
0.30
K/W
0.25
Z
thJK
0.20
Fig. 8 Transient thermal impedance
junction to heatsink (per diode)
R
thJK
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
0.179
0.188
0.196
0.216
0.254
0.15
30°
60°
120°
180°
DC
0.10
0.05
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
0.0066
0.0358
0.0831
0.0129
0.04
t
i
(s)
0.00054
0.098
0.54
12
12
1
2
3
4
5
0.00
10
-3
10
-2
10
-1
10
0
10
1
t
s
10
2
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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