EGP10A-EGP10K
EGP10A - EGP10K
Features
•
•
•
•
Superfast recovery time for high
efficiency.
Low forward voltage, high current
capability.
Low leakage current.
High surge current capability.
DO-41
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
10A 10B
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
.375 " lead length @ T
L
= 55°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
100
10C
150
Value
10D
200
1.0
30
-65 to +150
-65 to +150
10F 10G 10J 10K
300
400
600
800
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
2.5
50
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
t
rr
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
10A 10B
Forward Voltage @ 1.0 A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
10C
50
0.95
Device
10D
10F 10G 10J 10K
1.25
1.7
75
5.0
100
22
15
Units
V
ns
µA
µA
pF
2001
Fairchild Semiconductor Corporation
EPG10A - EPG10K, Rev. C
EGP10A-EGP10K
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
Peak Forward Surge Current, I
FSM
[A]
1
30
25
20
15
10
5
0
0.75
0.5
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
0.25
0
25
50
75
100
125
Lead Temperature [ºC]
150
175
1
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 1. Forward Current Derating Curve
50
T
A
= 150
º
C
Figure 2. Non-Repetitive Surge Current
1000
Forward Current, I
F
[A]
10
EGP10A-EGP10D
T
A
= 25
º
C
100
Reverse Current, I
R
[mA]
T
A
= 125
º
C
10
1
1
T
A
= 100
º
C
0.1
EGP10F-EGP10K
0.1
T
A
= 25
º
C
Pulse Width = 300µs
µ
2% Duty Cycle
0.01
0.2
0.4
0.6 0.8
1
1.2 1.4
Forward Voltage, V
F
[V]
1.6
1.8
0.01
0
20
40
60
80
100
120 140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
60
Total Capacitance, C
T
[pF]
50
40
30
Figure 4. Reverse Current vs Reverse Voltage
EGP10A-EGP10D
20
EGP10F-EGP10K
10
0
0.1
1
10
100
Reverse Voltage, V
R
[V]
1000
50Ω
NONINDUCTIVE
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
(+)
OSCILLOSCOPE
(Note 1)
0
-0.25A
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001
Fairchild Semiconductor Corporation
EPG10A - EPG10K, Rev. C
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2
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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