Thyristor Modules
Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 250
PSKH 250
I
TRMS
I
TAVM
V
RRM
= 2x 450 A
= 2x 287 A
= 800-1800 V
3
2
1
7
6
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Type
Version 1
PSKT 250/08io1
PSKT 250/12io1
PSKT 250/14io1
PSKT 250/16io1
PSKT 250/18io1
Version 1
PSKH 250/08io1
PSKH 250/12io1
PSKH 250/14io1
PSKH 250/16io1
PSKH 250/18io1
5
4
3
6 7 1
5 4 2
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
450
287
9000
9600
7800
8500
405 000
380 000
304 000
300 000
100
800
1000
120
60
20
10
-40...+140
140
-40...+125
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
●
●
PSKT
3
1
5 42
PSKH
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
●
●
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 860 A
f =50 Hz, t
P
=200 µs
V
D
= 2/3 V
DRM
I
G
= 1 A
non repetitive, I
T
= 290 A
di
G
/dt = 1 A/µs
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30 µs
t
P
= 500 µs
A/µs
V/µs
●
●
International standard package
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Keyed gate/cathode twin pins
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Applications
W
W
W
V
°C
°C
°C
V~
V~
●
●
●
●
●
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
Advantages
●
●
●
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
320
g
●
Space and weight savings
Simple mounting with two screws
Improved temperature and power
cycling capability
Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
I
RRM
I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 600 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 140°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
Characteristic Values
70
40
1.36
0.85
0.82
2
3
150
200
0.25
10
200
150
2
200
760
275
0.129
0.0645
0.169
0.0845
12.7
9.6
50
mA
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
µs
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
Fig. 1 Gate trigger characteristics
T
VJ
= 25°C; t
P
= 30 µs; V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 1 A; di
G
/dt = 1 A/µs
T
VJ
= T
VJM
; I
T
= 300 A, t
P
= 200 µs; -di/dt = 10 A/µs typ.
V
R
= 100 V; dv/dt = 50 V/µs; V
D
= 2/3 V
DRM
T
VJ
= 125°C; I
T
, I
F
= 400 A, -di/dt = 50 A/µs
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
other values
see Fig. 8/9
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT
PSKH
Threaded spacer for higher Anode/
Cathode construction:
Type
ZY 250,
material brass
20
12
14
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
∫i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
3xPSKT 250 or
3xPSKH 250
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3xPSKT 250 or
3xPSKH 250
0.15
K/W
30°
DC
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
Z
thJC
0.10
d
DC
180°C
120°C
60°C
30°C
R
thJC
(K/W)
0.129
0.131
0.131
0.132
0.132
0.05
Constants for Z
thJC
calculation:
i
0.00
10
-3
10
-2
10
-1
10
0
10
1
s
10
2
R
thi
(K/W)
0.0035
0.0165
0.1091
t
i
(s)
0.099
0.168
0.456
t
1
2
3
0.20
K/W
30°
DC
0.15
Z
thJK
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
0.169
0.171
0.172
0.172
0.173
DC
180°C
120°C
60°C
30°C
0.10
0.05
Constants for Z
thJK
calculation:
i
0.00
10
-3
10
-2
10
-1
10
0
10
1
s
10
2
R
thi
(K/W)
0.0033
0.0159
0.1053
0.04
t
i
(s)
0.099
0.168
0.456
1.36
t
1
2
3
4
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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