Three Phase
Rectifier Bridge
TM
(TRACTION - PAC )
Preliminary Data Sheet
V
RSM
V
DSM
(V)
800
1200
1400
1600
1800
V
RRM
V
DRM
(V)
800
1200
1400
1600
1800
Type
PSTD 82
I
dAV
V
RRM
= 88 A
= 800-1800V
PSTD
PSTD
PSTD
PSTD
PSTD
82/08
82/12
82/14
82/16
82/18
Features
Package with screw terminals
Isolation voltage 3000 V
∼
Planar glass passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
Symbol
I
dAVM
I
FSM
•
Test Conditions
Maximum Ratings
•
•
T
C
= 110 °C, (per module)
88
A
•
•
T
VJ
= 45 °C t = 10 ms (50 Hz), sine
750
A
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 °C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 8.3 ms (60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
820
670
740
2800
2800
2250
2250
A
A
A
A²s
A²s
A²s
A²s
°C
°C
°C
V
∼
V
∼
Applications
∫
i
2
dt
•
•
•
•
•
•
•
Supplies for DC power equipment
Input rectifier for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
T
VJ
T
VJM
T
stg
V
ISOL
M
d
-40... + 150
150
-40... + 125
50/60 Hz, RMS t = 1 min
I
ISOL
≤
1 mA
Mounting torque
t=1s
(M5)
2500
3000
Package style and outline
Dimensions in mm (1mm = 0.0394“)
5.0/44 Nm/lb.in.
3.0/26 Nm/lb.in.
170
g
Weight
Terminal connection torque (M5)
typ.
Symbol
I
R
V
F
V
TO
r
T
R
thJC
R
thJK
d
s
d
A
a
Test Conditions
V
R
= V
RRM,
T
VJ
= 25°C
V
R
= V
RRM,
T
VJ
= T
VJM
I
F
= 150 A,
T
VJ
= 25 °C
For power-loss calculations only
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
Characteristic Value
≤
≤
≤
0.3
5
1.6
0.8
5
1.1
0.183
1.52
0.253
10.0
9.4
50
mA
mA
V
V
m
Ω
K/W
K/W
K/W
K/W
mm
mm
m/s²
Data according to IEC 60747 refer to a single diode unless otherwise stated
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSTD 82
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per
diode I
FSM
: Crest value. t: duration
Fig. 3
∫
i
2
dt versus time (1-10ms)
per diode (or thyristor)
PSTD 82
Fig. 4 Power dissipation versus direct output
current and ambient temperature
Fig.5 Maximum forward current at
case temperature
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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