Thyristor Modules
Preliminary Data Sheet
V
RSM
V
DSM
900
1300
1500
1700
Symbol
I
TRMS
I
TAVM
I
TAVM
I
TSM
T
C
= 83°C
T
C
= 85°C
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
∫
i dt
2
PSVT 70
PSXT 70
Type
PSXT 70/08
PSXT 70/12
PSXT 70/14
PSXT 70/16
I
TRMS
V
RRM
= 80 A
= 800 - 1600 V
V
RRM
V
DRM
800
1200
1400
1600
Type
PSVT 70/08
PSVT 70/12
PSVT 70/14
PSVT 70/16
Base
PSVT
Maximum Ratings
80
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
Features
•
Package with screw terminals
•
Isolation voltage 3000V∼
•
Planar glasspassivated chips
•
UL registered, E 148688
Applications
•
Heat and temperature control for
industrial furnaces and chemical
processes
•
Lighting control
•
Motor control
•
Power converter
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
•
High power density
Characteristic picture
PSXT
Test Conditions
180° sine,
180° sine,
t = 10 ms (50Hz), sine
t = 8.3 ms (60Hz), sine
t = 10 ms (50Hz), sine
t = 8.3 ms (60Hz), sine
t = 10 ms (50Hz), sine
t = 8.3 ms (60Hz), sine
t = 10 ms (50Hz), sine
t = 8.3 ms (60Hz), sine
51
49
1150
1230
1000
1070
6600
6280
5000
4750
150
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 150 A
f =50Hz, t
p
=200µs
V
D
= 2/3 V
DRM
I
G
= 0.45 A
di
G
/dt=0.45 A/µs
non repetitive; I
T
=I
TAVM
V
DR
= 2/3 V
DRM
t
p
= 30µs
t
P
= 300µs
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
A/µs
V/µs
W
W
W
V
(dv/dt)
cr
P
GM
T
VJ
= T
VJM
;
T
VJ
= T
VJM
I
T
= I
TAVM
R
GK
=
∞;
method 1 (linear voltage rise)
P
GAVM
V
RGM
T
VJ
T
VJM
T
stg
°C
°C
°C
V∼
V∼
Nm
Nm
g
V
ISOL
M
d
Weight
50/60 HZ, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
(M6)
(M6)
2500
3000
5
5
270
Mounting torque
Terminal connection torque
typ.
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSVT 70, PSXT 70
Symbol
I
D
, I
R
V
T
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJK
d
s
d
A
a
T
VJ
= 25°C; t
P
= 10µs
I
G
= 0.45A; di
G
/dt = 0.45 A/µs
T
VJ
= 25°C; V
D
= 6V; R
GK
=
∞
T
VJ
= 25°C; V
D
= ½ V
DRM
I
G
= 0.45A; di
G
/dt = 0.45A/µs
T
VJ
= T
VJM
; I
T
= 120A, t
P
= 200µs; -di/dt=10A/µs
V
R
= 100V; dv/dt = 20 V/µs; V
D
= 2/3 V
DRM
per thyristor; sine 180°el
per bridge
per thyristor; sine 180°el
per bridge
Creeping distance on surface
Creeping distance in air
max. allowable acceleration
0.35
0.117
0.55
0.183
10
9.4
50
K/W
K/W
K/W
K/W
mm
mm
m/s
2
≤
≤
200
2
150
mA
µs
µs
V
D
= 6V
V
D
= 6V
T
VJ
= T
VJM
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
≤
≤
≤
≤
≤
≤
≤
Test Conditions
Characteristic Values
≤
≤
5
1.75
0.85
5.3
1.5
1.6
100
200
0.2
10
450
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
= 200A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
=T
VJmax
)
Package, style and outline
Dimensions in mm (1 mm=0.0394”)
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Microcontroller MCU
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